title: Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
abstract: We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au-TiB 2 -n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the series resistance in calculating the ideality factor and barrier height has been shown with the Cheung method and direct approximation one. It has been ascertained that an inconsistency between real cur
journal: Semiconductor Physics Quantum Electronics & Optoelectronics