title: THE CONDUCTIVITY OF SILICON MESARESISTORS IN JOULE HEATING CONDITIONS
abstract: The article presents the results on the influence of geometric factors and surface states at the interfaces on the processes of electronic transport in thin silicon films on dielectric. TCAD Sentaurus calculations of the mesaresistors relative change resistance (ΔR\R) on the applied power, have shown the decisive role of traps with "shallow" states in the film conductivity. Their presence leads to a nonmonotonic dependence ΔR\R.
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis