title: Simulation of Perspective Devices of Nanoelectronics. Part I. Models
abstract: In the paper models of perspective devices based on 2D-materials such as a quantum drift-diffusion model of field-effect transistors on bilayer graphene, model of resonant tunneling structures based on 2D-materials with vertical transport and model of resonant tunneling diodes including GaN with vertical transport were proposed. Investigations of IV-characteristics of devise structures including mono- and bilayer graphene, molybdenum dioxide, carbon silicide, wolfram diselenide, gallium nitride 
journal: Nano- i Mikrosistemnaya Tehnika