title: NANOMETER THICKNESS SILICON-ON-INSULATOR FILMS THERMAL STABILITY
abstract: Thermal stability of 2.2 and 4.7 nm thick silicon-oninsulator films was studied within anneal temperature range of 800-1100оС. It was found that at the higher temperatures film thickness decreases and stoichiometric composition changes with increasing the proportion of the amorphous phase. Mechanisms of structural stability dependence upon film thickness is discussed.
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis