title: Development of diode temperature sensors with operating range up to 750 K
abstract: The problem of expansion of the range of functioning of diode thermosensors in the region of high temperatures is considered and some of the results of the author’s research in this area are given. To solve this problem, it is proposed to use diode structures based on wide bandgap semiconductor compounds in the III-V system. The technological method of producing prototypes of high-temperature diode temperature sensors based on GaP is developed. The presented method allows manufacturing samples o
journal: Eastern-European Journal of Enterprise Technologies