title: MEASURING AND MODELING THE EFFECT OF LOW INTENSITY RADIATION ON DIGITAL CMOS ICS
abstract: Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad / s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate the critical value of the dose for the degradation of the parameters of the studied ICs.
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis