abstract: Preparation and structure of CuInSe 2 thin films for solar cells at low substrate temperatures CIS epitaxial films were grown on (001) KCl surface with PbS sublayer and on glassceramic at 400 . Annealing of the ( + )-CIS films on glass-ceramic, in two-step vacuum-arc plasma discharge at 550 o C provided the formation of a homogeneous large-crystalline -CIS. CIS (001) KCl PbS 400 . ( + )-CIS 550 o C -CIS. : , , , , .. 1. ( - )
journal: Electronics and Communications