title: GENERALIZED KINETIC MODEL OF GROWTH OF TWO- AND ZERO-DIMENSIONAL STRUCTURES OF SILICON AND GERMANIUM
abstract: In this work, a comprehensive consideration of the influence of the dependence of elastic stresses and surface energies on the thickness of the deposited material on the epitaxial formation of two-dimensional layers and quantum dots by the Stranski–Krastanow mechanism is carried out.
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis