title: LOW-ENERGY LOW-INTENSITI X-RAY RADIATION EFFECT ON THE SOI STRUCTURES ELECTROPHYSICAL CHARACTERISTICS
abstract: The low-energy low-intensity X-ray radiation effect on SOI structure electrophysical characteristics research results by mercury probe method is concerned here.
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis