title: FEATURES OF FORMATION OF BIPOLAR TRANSISTOR FOR IС WITH DIELECTRIC ISOLATION OF ELEMENTS
abstract: The processes of a selective epitaxy of silicon layers on the structures Si-SiO2-Si*, formation of dielectric isolation and diffusive areas of complementary bipolar transistor structures are optimized in the work. Complete dielectric isolation of elements IC in episilicon is reached at the expense technology of the structures Si- SiO2-Si* association with the LOCOS technology. Oxidation of the border between layers epimono-Si and epi-Si* is formatted of complete dielectric isolation of elements 
journal: Radio Electronics Computer Science Control