title: Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field
abstract: The article presents the research results on the influence of the amount of oxygen in a mixture with sulfur hexafluoride on the rate and anisotropy of the silicon etching in the plasma-chemical reactor with the controlled magnetic field. The etching was performed under the pressure of (0,3—2,0)×10–3 Torr in the working chamber and the energy of chemically active ions of 50—80 eV. It was possible to etch the silicon to the depth of 100 µm with anisotropy 10, using a thick (0.4—1 µm) nickel mask.T
journal: Technology and design in electronic equipment