abstract: A dynamic 3D thermoelectric model has been developed to calculate the temperature field and emitter current density in the comb structure of a heterojunction bipolar transistor (HBT) with the length of the emitter metallization paths comparable to the size of the crystal, taking into account the inhomogeneous distribution of current density under the emitter paths caused by a voltage drop on the resistance of the current-carrying metallization.The model is based on an iterative solution in the C
journal: Radioelectronics Nanosystems Information Technologies