title: MEMORY DEVICE BASED ON CDTE-SIO2-SI HETEROSTRUCTURE
abstract: In this paper, an increase in the operational control of long-term information storage based on the CdTe-SiO2-Si heterostructure is considered, and the selectivity of a wide range of radiation in the range of 0.5-3.0 microns is shown.
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis