title: ADVANCED PROCESS OF DEEP ANISOTROPIC ETCHING OF SILICON WITH A HIGH ASPECT RATIO FOR THE FORMATION OF TSV STRUCTURES
abstract: The aim of this work was to improve the existing technology of deep anisotropic etching of silicon for its application in the manufacture of three-dimensional TSV structures, namely, to increase the selectivity to the mask and reduce the surface roughness.
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis