title: CUBIC SILICON CARBIDE ON SILICON
abstract: A basic technology for cubic silicon carbide (3C-SiC) formation on silicon (Si) plates in high-frequency (HF and HFI) and very-high-frequency (microwave) discharges at low pressure has been developed. It is found that 3C-SiC layers formation on Si should be multiple staged, but integrated, i.e. sequential change of stages should be performed without working chamber deevacuating and accompanied only by changing modes, gaseous media and applying electrical displacement. The following technological
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis