title: Nonlinear Inertial Diode Model Considering the Dependence of Nonequilibrium Charge Carrier Lifetime on Direct Current to Improve Simulation of Radioelectronic Equipment
abstract: Introduction. Adequate modeling of semiconductor devices with a p–n -junction in reverse bias represents a relevant research problem. The existing quasistatic and non-quasistatic models fail to provide a satisfactory description for the dependence of nonequilibrium charge carrier lifetime on current density. This leads to significant simulation errors (tens of percent) at pulsed broadband signals. Simulation errors arise, because the existing models regard the lifetime as a constant value. Aim. 
journal: Journal of the Russian Universities Radioelectronics