title: Microwave Optical Switches Metal–Semiconductor–Metal Schottky based on GaAs
abstract: Interdigitated metal–semiconductor–metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of photoswich interdigitated fabricated metal-semiconductor- on GaAs metal non-intentional doped (NID) absorbing layer is investigated. The photodetector MSM is introduced in the microwave lines have active surfaces of 3x3 m2 and electrode spacing of 0.2, 0.3, 0.5 and 1 m.. The photocurrent response was measured after excitatio
journal: Renewable Energy and Power Quality Journal