title: Ka-band GaAs pHEMT Wideband Power Amplifier MMICs
abstract: Introduction. Ka-band power amplifier MMICs are essential components of many electronic systems. Their application area covers radar, 5G communication, and test equipment. The design of a reliable power amplifier with high-performance characteristics is a challenging task. Aim. Design of two types millimeter-wave wideband power amplifier (PA) MMICs by using 0.13 µm GaAs pseudomorphic high-electron mobility transistor (pHEMT) technology process. Materials and methods. A cell unit measuring 8 × 50
journal: Journal of the Russian Universities Radioelectronics