title: CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES
abstract: Surface recombination strongly influence on the photoconductivity decay curve. In this work it was shown that usually defined using this curve the effective life time don’t achieve maxima value if silicon sample thickness exceeds six diffusion length. In this case well known formulas for calculation of free carrier recombination lifetime need to be adjusted.
journal: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis