|Publication number||US3617459 A|
|Publication date||Nov 2, 1971|
|Filing date||Sep 15, 1967|
|Priority date||Sep 15, 1967|
|Also published as||DE1790094B1|
|Publication number||US 3617459 A, US 3617459A, US-A-3617459, US3617459 A, US3617459A|
|Inventors||Logan Joseph S|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (3), Non-Patent Citations (1), Referenced by (48), Classifications (12)|
|External Links: USPTO, USPTO Assignment, Espacenet|
United States Patent 3,461,054 8/1969 Vratny FOREIGN PATENTS 664,061 1965 Belgium 204/298 OTHER REFERENCES Davidse, Theory & Practice of RF Sputtering" Vacuum Vol. 17 No.3 1966 Primary Examiner-John H. Mack Assistant Examiner-Sidney S. Kanter Attorneys-Hanifin and Jancin and Wolmar .1. Stoffel ABSTRACT: An RF sputtering method wherein the potential of the workpiece relative to the plasma is the sputtering chamber is adjusted to provide a control over the physical characteristics of the resulting sputtered films. The apparatus has an insulated target electrode, an insulated workpiece holder electrode, and a conductive surface in contact with the plasma generated by impressing an RF voltage across the target electrode and workpiece holder electrode. An impedance is provided between the workpiece holder electrode and the conductive surface. The impedance provides a control of the workpiece holder voltage.
' aounos H azmod 5a 01 21 u 09 PATENTEU NUV2 1971 SHEET 1 0F 2 PRIOR ART FIG. 1
T O u d V 7 V V V V w 0 O O 0 IT 2 J0 4 %v L O wr 3 O M ii}, 5v m o 8 H H 0 E m s X m: U O V 2 W 8 NW E Pm OC n n l u G G O m m m m 1 4 J J Emmmnu F556 #65 8 $5 61 M2588 FIG. 3
PRESSURE 15 MILLITORR (ARGON) s S U A G 0 FIG. 4
SUBSTRATE REACTANCE X -OHMS INVENTOR JOSEPH S. LOGAN BY MW 9, W
ATTORNEY FIG. 5
K RF POWER SOURCE RF SPUTTERING METHOD AND APPARATUS FOR PRODUCING INSULATING FILMS OF VARIED PHYSICAL PROPERTIES BACKGROUND OF THE INVENTION The sputtering of dielectric materials by radiofrequency fields is generally disclosed in an article by G. S. Anderson, William N. Mayer, and G. W. Wehner appearing in the Journal of Applied Physics, Vol 33, No. 10, Oct. 1962. Improvements in the Method and Apparatus for RF Sputtering are disclosed in commonly assigned applications, Ser. No. 428,733, Filed Jan. 28, 1965, now U.S. Pat. No. 3,369,991 and Ser. No. 517,853, Filed Dec. 20,1965.
Increased interest in the deposition of insulating films by sputter methods has resulted with the development of integrated monolithic and thin film circuit devices. Insulating films of electrically stable high melting or softening point materials can be applied to suitable semiconductor substrates without subjecting the devices to the high temperatures normally required when the same materials are applied by other methods, which high temperatures might otherwise seriously degrade or ruin the device. This greatly increases the choice and range of materials available for insulating, packaging, etc. It makes possible the use of materials and combinations of materials having desirable insulting or conducting properties or other desirable properties which materials could not otherwise be used because of processing requirements, differences in coefficients of expansion of the films, and the materials underlying and overlying same, etc.
The deposition of an insulating film by reactive and direct RF sputtering is normally carried out in a vacuum chamber, which is typically metal. The material to be sputtered is mounted on an'insulated target electrode within the chamber. Positioned in parallel and adjacent relation to the target electrode is a metal plate which supports the work pieces, typically semiconductors, to be covered with the insulating film. Generally, the metal plate is supported by a metal baseplate on metal support legs or the like. An RF power source is arranged to apply an RF potential across the target electrode and metal plate which produces a glow discharge in the region between the target and workpieces. The baseplate and other conductive surfaces of the chamber set the potential of the plasma within the chamber.
The plasma is defined as a field free region in space populated by positive and negative charges.
The technique of RF sputtering allows the deposition of virtually any material in thin film form having essentially the same composition throughout. Of particular interest to the semiconductor industry is the use of such films to provide multilevel insulation in monolithic integrated circuit devices. The manufacture of such devices requires precisely etched holes in insulating films in order to allow interconnection between layers of metallization at different levels. The etching properties of the films are thus ofconsiderable importance.
In the manufacture of multilevel integrated circuit devices, it would frequently be desirable to alter the etch rates of various overlying and underlying films. For example, an underlying film may be etched in undesired areas during etching of an overlying film when precise control of the etching time is not possible or the etch rate is not consistent. A problem experienced with conventionally sputtered films is a tendency to pinhole under chemical attack. For example, in the etching of via holes etchant may reach metal through the very small holes in the layer being etched before the bottoms of the holes actually reach the metal. This results in damage to the metal and in more serious instances to damage to insulation films underlying the metal. Another problem encountered in Sputtering insulating films is a tendency of the device to develop inversion" due to ionic charge pile up. This can have relatively serious consequences on the operation of the device.
In general, the physical properties of sputtered films have been controlled mainly by controlling the gas pressure, the temperature of the substrate, and applied magnetic fields, or
combinations thereof, as for example, as disclosed in commonly assigned application Ser. No. 583,l75, filed Sept. 30, I966, now abandoned. Under some conditions, the precise control of these variables are difficult or impractical, and consequently the results obtained are not sufficiently consistent. An additional dimension of control to vary the physical properties of the sputtered films would greatly advance the sputtering technology. This invention provides such an additional control parameter.
SUMMARY OF THE INVENTION An object of this invention is to provide an improved method for forming thin films by sputter techniques wherein the physical properties of the film can be altered by controlling the film voltage during sputtering.
Another object of this invention is to provide an improved RF-sputtering apparatus capable of controlling the physical properties of the resultant sputtered film.
An object of this invention is to provide an improved sputtering method and RF-sputtering apparatus which makes possible the adjustment of the etch rate of the resultant insulating film.
Another object of this invention is to provide a method and RF-sputtering apparatus which is capable of reducing the tendency of the resultant sputtered insulating film to pinhole under chemical attack.
Still another object of this invention is to provide an improved RF-supttering apparatus which in operation is capable of controlling the substrate voltage magnitude, and also the phase of the substrate holder voltage with respect to cathode voltage.
The aforementioned objects of the invention are achieved by an improvement in an apparatus for RF sputtering which apparatus has a low-pressure ionization chamber. a target holder electrode, a substrate holder and a conductive surface within the chamber, and a source of radio frequency power for producing a glow discharge in the gas in the region between the target electrode and substrate holder electrode by impressing an RF voltage across the respective electrodes. The improvement in the apparatus is the provision of electrically insulating the substrate holder, and connecting an impedance across the substrate holder electrode and the conductive surface. The arrangement provides a means for controlling the RF voltage potential between the substrate holder and conductive surface. The magnitude of the substrate holder voltage and the phase angle of the substrate holder voltage relative to the target voltage can be controlled by varying the impedance, or selecting a suitable value.
The invention provides an additional parameter, and an apparatus embodiment which facilitates its control, for the varying of physical properties of sputtered films. The parameter can be controlled with more precision, and with greater ease, than was possible with the formerly known parameters such as gas pressure, magnetic field, power, etc. The method and apparatus is particularly useful in the fabrication'of integrated circuit devices.
BRIEF DESCRIPTION OF THE DRAWINGS The foregoing and other objects, features, and advantages of the invention will be apparent from the following more particular description of a preferred embodiment of the invention as illustrated in the accompanying drawings:
In the drawings:
FIG. 1 is a schematic view illustrating the general arrangement of the elements and power supply ofa typical sputtering apparatus known to the prior art.
FIG. 2 is a schematic view illustrating the general arrangement of the elements and power supply ofthe invention.
FIG. 3 is a plot of substrate holder impedance versus DC substrate voltage and current depicting various operating conditions of a sputtering apparatus having a given geometry and operating under a given set of conditions.
FIG. 4 is a plot of substrate reactance versus etch rate which illustrates the effect on the etch rate of a deposited SiO film by the varying of the impedance in conformance with the method of the invention.
FIG. 5 is a cross-sectional view of a preferred embodiment of a sputtering apparatus of the invention.
DESCRIPTION OF A PREFERRED EMBODIMENT Referring now to the figures of the drawings there is shown in FIG. 1 a schematic view of a sputtering apparatus and its relationship to the power supply as known to the prior art. The sputtering apparatus 10 has a low-pressure gas ionization chamber 12, typically in the form of a chamber which is mounted on a base plate 14. A suitable inert gas such as argon is introduced into the chamber through an inlet (not shown) and maintained at a low pressure by means ofa vacuum pump (also not shown). Within the gas-filled enclosure are positioned a target electrode 16 having mounted thereon a disk 17 of the material to be sputtered, and a substrate holder electrode 18 supported on legs 19. Surrounding the target electrode l6 and insulated therefrom is a shield 20 of conductive material. Substrates 22 are supported on substrate holder electrode 18 mounted on conductive legs 19, in turn joined to baseplate 14. An RF power source 24 is connected to apply an RF potential across the target electrode 16 and substrate holder electrode 18.
The application of an RF voltage to the target electrode in the illustrated sputtering apparatus 10 causes RF currents to flow to the substrate holder 18 and down to the baseplate 14 by way of the metal support legs 19. At the frequency of operation typically (13.56MH2) the impedance of the supporting legs 19 is enough to cause a measurable RF voltage to appear between the substrate holder and the baseplate. The voltage is also affected by the gas pressure, and size and geometry of the electrodes. The potential of the plasma within the chamberlZ is governed by the voltage applied to the conductive surfaces in contact therewith, such as baseplate 14, the conductive sidewalls of the enclosure 12, and the cathode shield 20. These surfaces are normally maintained at ground potential. Thus in the illustrated sputtering apparatus 10 there exists a difference in the potential of the plasma and the substrate electrode holder and substrates thereon. This difference in potential, and also the phase of the substrate holder voltage with respect to the-cathode, resulting from the impedance between the substrate holder electrode and the baseplate has been discovered to have a significant effect on the physical characteristics of the dielectric coatings applied by sputtering techniques.
In H0. 2 there is illustrated schematically the general structure and novel arrangement of the power supply and the elements of the sputtering apparatus of the invention. The sputtering apparatus 30 of the invention has an enclosure 12 mounted on a metal baseplate 14 with a target electrode 16 mounted therein. A target 17 is mounted on target electrode 16 and shielded with a shield 20. The substrate electrode 32 is mounted within enclosure 12 on legs 34 ofinsulating material which insulates the electrode 32 from the metal base 14. The power supply 24 is arranged to apply an RF voltage potential across target electrode 16 and base plate 14, and also across electrode 16 and substrate holder electrode 32 through an impedance 36. Substrate holder electrode lead 38 is insulated from plate 14 as indicated in FIG. 2. ln operation, there is a voltage potential V existing between the conductive surfaces in contact with the plasma within enclosure 12 and the substrate holder electrode 32. The capacitive and inductive components of impedance 36 can be varied to control the substrate holder voltage to provide a control over the physical properties of the films applied by the sputtering apparatus 30. This will be explained in more detail in the description that follows.
ln any sputtering operation, the active agent is a glow discharge maintained between spaced electrodes in a suitable gaseous medium. In a direct current sputtering operation, the target is a negative electrode or cathode. In an alternating current sputtering operation, the target may be referred to as a cathode, even though it is not always negative. Under the infiuence of the electric field established between the electrodes, ionization of the gas is produced by the collision of free electrons with the gas molecules, producing positively charged gas ions. These ions are attracted toward the cathode, thereby creating what is known as an ion sheath around the cathode. When a glow discharge exists, the region about the cathode which contains this concentration of ions also is known as the Crookes Dark Space. Within this region the ions are subjected to a high potential which accelerates them toward the cathodes so that they bombard the target with sufficient impact to eject atomic particles therefrom. These ejected or sputtered particles of cathode material will be deposited upon nearby objects. The apparatus may be so designed, for example, that the sputtered material will deposit upon articles that are mounted on the opposite electrode or anode, of the apparatus.
As explained herein above, direct current excitation cannot be successfully employed in the sputtering of an insulating or dielectric material, because when such material is bombarded by positive ions, it will build up a positive charge that repells the ions so they cannot bombard the target with sufficient impact to cause sputtering. Hence it is necessary to employ an alternating current excitation when sputtering a dielectric material in order to discharge the target periodically. Sputtering action takes place during these periods when the target is at a sufficiently negative potential with respect to the glow discharge. During the intervening periods, when the polarities of the electrodes are reversed,,electrons are attracted to the target for removing the positive-ion-repellent charge therefrom. Due to the fact that the electrons have greater mobility than the ions, there will be a tendency for more electrons than ions to flow toward the target, but inasmuch as there cannot be any net direct current flowing though a dielectric the target will bias itself negatively in a sufficient amount to prevent direct current from flowing, assuming that the target is the only path which the current can flow between the electrodes.
In order to maintain a glow discharge with a dielectric target or cathode," the frequency of the applied voltage must be high enough so-that the number of ions reaching the target during the negative half-cycle, i.e. when the target electrode is positive and the substrate holder electrode is negative, is not sufficient to neutralize the desired negative charge on the surface of the target. If the target were to acquire substantial positive potential, this would cause reverse sputtering to the object being coated as well as undesirable sputtering of the metal parts associated with the substrate holder electrode which normally functions as the anode. With the properly selected frequency and magnitude of applied voltage, the sputtering action will be confined to the target, and the anode or substrate holder will not reach its sufficiently high negative potential at any time to produce reverse sputtering or other undesired sputtering effects. Under these conditions, the target being negatively charged most of the time performs a function analogous to that of a cathode in direct current sputtering, and for that reason it may be referred to as the RF cathode, while the opposite electrode is called the RF anode.
With RF voltage applied to target electrode 16, the target 17 functions as the RF cathode during that time in the cycle when the potential of the electrode 16 is negative with respect to ground. During the intervening time the potential of electrode 16 rises above the ground level, thereby attracting electrons to the target for removing the positive charge previously placed on the target by the bombarding ions. As mentioned herein above, electrons are attracted to the target in far greater numbers than the heavier ions but since the target is a dielectric and its electrode 16 is shielded, no net direct current can flow through the RF cathode. Thus, as a result of the interaction of the ions and electrons, the target 17 maintains itself at a generally negative potential with respect to ground, and if it does momentarily require a positive potential, this is not sufficient to reverse the sputtering process or to cause undesired sputtering of any metal parts associated with the RF anode structure 32.
The improved sputtering apparatus and method of this invention proposes controlling the impedance between the substrate holder and a relatively large conductive surface within the sputtering chamber in contact with the plasma to thereby provide control of the substrate holder voltage magnitude, and of the phase of the substrate holder voltage with respect to the target holder voltage. This general mode of substrate electrode tuning can be used to control the properties of RF-sputtered dielectric films including reactive sputtering. It provides an additional control to supplement the control exerted by varying the pressure, temperature, and magnetic field within the sputtering apparatus which variables are known to the art. Substrate tuning provides an additional dimension of control to the process which can be used to alter the physical properties of sputtered coatings.
The series inductance-capacitance tuning network show in FIG. 5 as variable inductance 74 and capacitor 75, and in FIG. 2 as impedance 36, is capable of being varied from a capacitive reactance through a series resonance reactance), to an inductance reactance which can be made to resonate in parallel with the stray capacitance between the substrate holder electrode and ground, i.e. the plate 14 and conductive sidewalls 42 chamber. Thus, the net reactance between substrate holder electrode 32 and ground is continuously variable from zero to a very large inductive or capacitance value. An RF choke 76 is connected to the substrate holder electrode and to a DC meter 78 to measure the DC condition of the substrate holder. Either open circuit DC voltage or short circuit DC current can be measured without disturbing the RF circuit. In a sputtering apparatus in which the impedance between plate 14 and substrate holder electrode is purely inductive, there will be an approximate 180 phase shift between the cathode or target electrode voltage and the substrate holder or anode voltage. Theoretically with such a purely inductive impedance, the cathode voltage will reach its peak positive voltage at the same time as the substrate voltage attains its peak maximum negative voltage. Under such conditions, there will be a maximum DC current flow between the substrate holder electrode and ground since in this condition where the cathode voltage is negative the electrons in the space between the cathode and anode are forced toward the anode while simultaneously the voltage of the anode is positive which results in an attraction of the electrons. This results in a maximum number of electrons collected per cycle by the substrate holder. Conversely, when the impedance is purely capacitive there is approximately a zero degree phase relation between the cathode voltage and the substrate voltage. As such, the cathode voltage and substrate voltage are in step both attaining their most positive and most negative values simultaneously. This results in a minimum DC current between the substrate holder and ground.
Referring now to FIG. 5, there is depicted a preferred specific embodiment 40 of the sputtering apparatus of the invention. It is understood that FIG. does not necessarily depict the relative dimensions of the various elements of the apparatus, since some are depicted schematically. Apparatus 40 has a metal baseplate 14 having mounted thereon a cylindrical enclosure 42 with a top plate 44 supported thereon. Annular seals 45 are provided to insure a tight seal between the base plate 14, cylindrical wall 42, and top plate 44. A vacuum pump 46 communicates with the interior of apparatus .40 shown schematically in FIG. 5. Also provided is an inlet 48 for introducing gas within the chamber of apparatus 40 with a valve 49 to control the flow of gas. Mounted within the chamber is a target electrode 16 supporting target 17 thereon. Target electrode 16 is provided with a heat-exchange means to control the temperature. Cooling fluid is circulated through the annular opening formed between electrode terminal 51 and concentric tube 21 and tube 21. As indicated by the arrows, cooling fluid is introduced in the aforementioned annular opening, circulated within the target electrode 16 and subsequently withdrawn through outlet tube 51. As indicated in FIG. 5, target electrode 16 is insulated from plate 44 with an insulating sleeve 52 of glass, ceramic or a suitable plastic or other suitable insulating material. A shield 20 is provided which surrounds the target electrode 16 to prevent erosion of the electrode by the sputtering action. This shield is described and claimed in commonly assigned patent application Ser. No. 428,733, filed Jan. 28, 1965.
A substrate holder electrode is positioned opposite the target 17 within the chamber of the sputtering apparatus. Substrate holder electrode consists of a conductive plate 32 supported on legs 34 of insulating material. Substrates 60 are mounted on an insert plate 62 seated in a recess in plate 32. An electrode and cooling coil 64 makes electrical contact with plate 32 and also provides a means to control the temperature of the plate and substrates. Coil 64 is introduced within the chamber through an insulating seal 66 in the bottom of plate 14. The temperature of the substrate holder electrode is maintained by circulating water or other liquid through coil 64 as indicated by the arrows on the drawing.
A RF power source 70 is electrically connected to the target electrode 16 to apply an RF voltage potential across the target electrode 16. A suitable impedance-matching circuit is illustrated schematically in the drawing. It consists of a variable capacitor 71, an inductance 72, and second variable capacitor 73 connected across the power source to plate 44, which circuit provides a means of compensating for the impedance of the power supply conduit to maintain the desired phase of the voltage and current delivered to the target electrode. An impedance consisting of a variable inductance 74 and a capacitor 75 is connected across ground baseplate l4 and the substrate electrode holder. This impedance provides a new degree of control to be applied when sputtering dielectric films on substrates.
In order to monitor the DC substrate holder voltage or current, a shunt inductance 76 in series with a DC meter 78 is connected across ground and the substrate electrode holder. This arrangement, including the impedance having the variable inductor element 74 and capacitor 75, enables the applica' tion and control of an RF voltage potential to be applied to substrates being sputtered.
This condition creates a negative DC potential on the surface of the deposited insulator film which attracts positive impurity ions in the insulator film to the surface of the film. This attraction of the impurity ions has the effect of physically removing them from the semiconductor body-insulating film interface thus eliminating the inversion phenomenon.
The method and apparatus can also be used to control the amounts of sputtering gas trapped in the film. An example where such may be useful is the varying of the electrical resistivity of a sputtered metal film since resistivity is influenced by trapped gases.
In order to better understand the invention, the following examples are set forth to show the manner in which the apparatus and method can be employed.
EXAMPLE I With a sputtering apparatus similar to the depicted in FIG. 5, silicon wafers were loaded on the substrate electrode holder, which was 9 inches in diameter, a silica target with a diameter of 6 inches was mounted on the target holder electrode, and RF power of 500 watts applied. The target substrate holder spacing was 1.25 inches. The pressure Voltage maintained at 15 millitorr. A number of runs were made in which the substrate reactance was varied by changing variable impedance 74. At each variation, the open circuit DC voltage and the short circuit DC current was measured with DC meter 78. The results are given in the following table and also shown in FIG. 3, of the drawing. Curve 82 depicts open circuit voltage and curve 84 depicts short circuit current.
Table I This illustrates the correlation between substrate reactance and DC substrate voltage and DC substrate current. The portions of the curves 83 and 85 depict narrow ranges of instability. The reason for the instability ranges is not known at present.
EXAMPLE ll Silicon dioxide coatings were applied to silicon wafers using a sputtering apparatus generally similar to the one depicted in FIG. 5 and described in example I. The wafers were polished, cleaned and dried in the conventional manner and placed on the substrate holder electrode. The chamber was closed and argon gas introduced and maintained at a pressure of 15 millitorr.
A total of seven runs were made in which SiO, films were applied to silicon wafers. In all of the runs, the power was held constant at 500 watts for a duration of 30 minutes.
The net substrate holder reactance was different for each run varying from l6 to +27 ohms. The net reactance represented the combination of the stray impedance from the apparatus and the reactance of the variable impedance. During each of the runs, the DC substrate current was read directly from DC meter 78.
The pinhole breakup thickness of each of the films was measured by the following technique. A plurality of areas were etched in each wafer which extended partially through the films to different depths which depths were measured. The wafer was then placed in a copper electric plating bath for a period of sufficient duration to allow copper to plate out on any exposed area. The wafers were then examined under a microscope. A high density deposit in an etched area indicated a pinhole breakup.
The trapped argon in the sputtered films on each wafer was measured by X-ray florescence techniques.
The results of the'aforementioned tests are given in the following table. The results of the etch rates of the films are also depicted graphically in FIG. 4.
TABLE II Pinhole D subbreak-up Estimated strate thickness mole Substrate holder P etch (percent percent reaetance current rate, of total trapped Xohms (ma.) AJsec. thickness) argon At the termination of the runs, the wafers were subjected for a given time interval to an etchant consisting of 10 parts (by volume)HNO (70 percent solution); parts (by volume) HF (49 percent solution); 300 parts (by volume) H O, for a given time interval. The depth of the etch was measured and the etch rate calculated. The above table and FIG. 4 both illustrate the profound influence of substrate reactance 8v on the etch rate, pinhole breakup thickness, and percent of tra ed ar on.
ile t e invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
1. In an apparatus for RF sputtering, a low-pressure ionization chamber, a target holder electrode, a target of dielectric material supported on the target holder electrode, a workpiece holder electrode, and a third electrode comprising at least a conductive surface, and a source of RF power arranged to impose an RF voltage across the target holder electrode and the third electrode to produce a glow discharge in the region between the target holder electrode and the workpiece holder electrode, the improvement comprising:
means for electrically insulating said third electrode from said target holder electrode and said workpiece holder electrode,
impedance means electrically connected directly between said workpiece holder electrode and said third electrode, said impedance means to provide a control of the relative RF voltage between the workpiece holder electrode and the third electrode.
2. The apparatus of claim 1 wherein the source of RF power is arranged with a first terminal in electrical contact with said target holder electrode, a second terminal of opposite polarity in electrical contact with said third electrode, and said substrate holder in electrical contact with said second terminal through said impedance means,
the resultant apparatus in use adapted to provide a control for the substrate holder voltage magnitude and for the phase angle of the substrate voltage with respect to target holder electrode voltage.
3. The apparatus of claim 2 further including a means to monitor the DC- voltage potential between said workpiece holder electrode and said third electrode.
4. The apparatus of claim 1 wherein said impedance means includes a variable inductance.
5. The apparatus of claim 1 wherein said impedance means includes a variable capacitance.
6. The apparatus of claim 1 wherein said third electrode includes a metal baseplate positioned adjacent and beneath said workpiece holder electrode.
7. The apparatus of claim 6 wherein said third electrode further includes metal sidewalls of said chamber.
8. The apparatus of claim 7 wherein said third electrode further includes a metal top plate for said chamber.
9. The apparatus of claim 8 wherein said third electrode further includes shield means for said workpiece holder electrode.
10. In a method for sputtering a dielectric material by RF- stimulated glow discharge whereby power from an RF power source is impressed across a target electrode associated with a source of material, and the combination of a substrate holder electrode supporting workpieces to be coated and a conductive surface insulated from said target electrode and substrate holder electrode and in contact with the resultant generated plasma in the environment of the target electrode and substrate holder electrode, the improvement comprising,
imposing an impedance between said substrate holder electrode and said conductive surface, adjusting the impedance to vary the substrate holder RF voltage magnitude, and the phase of the substrate holder voltage with respect to the target electrode.
11. The method of claim 10 wherein net impedance of the imposed impedance and the stray impedance of the apparatus is essentially an inductive reactance.
12. The method of claim 1 wherein the inversion characteristics of the sputtered film are controlled by DC grounding the substrate holder.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3451917 *||Jan 10, 1966||Jun 24, 1969||Bendix Corp||Radio frequency sputtering apparatus|
|US3461054 *||Mar 24, 1966||Aug 12, 1969||Bell Telephone Labor Inc||Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias|
|BE664061A *||Title not available|
|1||*||Davidse, Theory & Practice of RF Sputtering Vacuum Vol. 17 No. 3 1966|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US3767551 *||Nov 1, 1971||Oct 23, 1973||Varian Associates||Radio frequency sputter apparatus and method|
|US3860507 *||Nov 29, 1972||Jan 14, 1975||Rca Corp||Rf sputtering apparatus and method|
|US4051063 *||Nov 18, 1974||Sep 27, 1977||United Kingdom Atomic Energy Authority||Storage of material|
|US4131533 *||Dec 30, 1977||Dec 26, 1978||International Business Machines Corporation||RF sputtering apparatus having floating anode shield|
|US4268374 *||Aug 9, 1979||May 19, 1981||Bell Telephone Laboratories, Incorporated||High capacity sputter-etching apparatus|
|US4325778 *||Jan 16, 1981||Apr 20, 1982||Bell Telephone Laboratories, Incorporated||High capacity etching process|
|US4693805 *||Feb 14, 1986||Sep 15, 1987||Boe Limited||Method and apparatus for sputtering a dielectric target or for reactive sputtering|
|US4802968 *||Jan 29, 1988||Feb 7, 1989||International Business Machines Corporation||RF plasma processing apparatus|
|US4818359 *||Dec 1, 1987||Apr 4, 1989||International Business Machines Corporation||Low contamination RF sputter deposition apparatus|
|US4931169 *||Sep 28, 1988||Jun 5, 1990||Leybold Aktiengesellschaft||Apparatus for coating a substrate with dielectrics|
|US5423971 *||Jan 10, 1994||Jun 13, 1995||Leybold Aktiengesellschaft||Arrangement for coating substrates|
|US5498291 *||Mar 17, 1995||Mar 12, 1996||Leybold Aktiengesellschaft||Arrangement for coating or etching substrates|
|US5814195 *||Oct 25, 1996||Sep 29, 1998||The Boc Group, Inc.||Sputtering system using cylindrical rotating magnetron electrically powered using alternating current|
|US5849372 *||Mar 18, 1996||Dec 15, 1998||Isis Innovation Limited||RF plasma reactor and methods of generating RF plasma|
|US5946013 *||May 8, 1996||Aug 31, 1999||Canon Kabushiki Kaisha||Ink jet head having a protective layer with a controlled argon content|
|US6095084 *||Jul 14, 1997||Aug 1, 2000||Applied Materials, Inc.||High density plasma process chamber|
|US6478924||Mar 7, 2000||Nov 12, 2002||Applied Materials, Inc.||Plasma chamber support having dual electrodes|
|US6730609 *||Oct 9, 2001||May 4, 2004||Micron Technology, Inc.||Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device|
|US6989683 *||Aug 4, 2004||Jan 24, 2006||International Business Machines Corporation||Enhanced endpoint detection for wet etch process control|
|US7094699 *||May 3, 2004||Aug 22, 2006||Micron Technology, Inc.||Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device|
|US7573116||Aug 18, 2006||Aug 11, 2009||Micron Technology, Inc.||Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device|
|US7767056 *||Aug 8, 2007||Aug 3, 2010||Canon Anelva Corporation||High-frequency plasma processing apparatus|
|US8052799 *||Oct 12, 2006||Nov 8, 2011||International Business Machines Corporation||By-product collecting processes for cleaning processes|
|US8182662||Mar 27, 2009||May 22, 2012||Sputtering Components, Inc.||Rotary cathode for magnetron sputtering apparatus|
|US8368013 *||Apr 12, 2011||Feb 5, 2013||Hitachi High-Technologies Corporation||Analyzer, ionization apparatus and analyzing method|
|US8540851||Feb 19, 2009||Sep 24, 2013||Fujifilm Corporation||Physical vapor deposition with impedance matching network|
|US8557088 *||Feb 19, 2009||Oct 15, 2013||Fujifilm Corporation||Physical vapor deposition with phase shift|
|US9111732 *||Aug 25, 2008||Aug 18, 2015||Fujifilm Corporation||Sputtering method and apparatus|
|US20040203240 *||May 3, 2004||Oct 14, 2004||Howard Bradley J.|
|US20050006027 *||Aug 4, 2004||Jan 13, 2005||Leping Li||Enhanced endpoint detection for wet etch process control|
|US20060281319 *||Aug 18, 2006||Dec 14, 2006||Howard Bradley J|
|US20080053615 *||Aug 8, 2007||Mar 6, 2008||Canon Anelva Corporation||High-Frequency Plasma Processing Apparatus|
|US20080093212 *||Oct 12, 2006||Apr 24, 2008||Edward Crandal Cooney||By-product collecting processes for cleaning processes|
|US20090057135 *||Aug 25, 2008||Mar 5, 2009||Takamichi Fujii||Sputtering method and apparatus|
|US20090178917 *||Mar 17, 2009||Jul 16, 2009||Canon Anelva Corporation||Method of sputtering a high-k dielectric material|
|US20100147801 *||Feb 18, 2010||Jun 17, 2010||Canon Anelva Corporation||High-Frequency Plasma Processing Apparatus|
|US20100206714 *||Feb 19, 2009||Aug 19, 2010||Youming Li||Physical vapor deposition with phase shift|
|US20100206718 *||Feb 19, 2009||Aug 19, 2010||Youming Li||Physical vapor deposition with impedance matching network|
|US20100243428 *||Mar 27, 2009||Sep 30, 2010||Sputtering Components, Inc.||Rotary cathode for magnetron sputtering apparatus|
|US20110253889 *||Apr 12, 2011||Oct 20, 2011||Hitachi High-Technologies Corporation||Analyzer, ionization apparatus and analyzing method|
|DE4301189C2 *||Jan 19, 1993||Dec 14, 2000||Leybold Ag||Vorrichtung zum Beschichten von Substraten|
|EP0031704A2 *||Dec 22, 1980||Jul 8, 1981||Western Electric Company, Incorporated||Improvements in or relating to apparatus for a reative plasma process|
|EP0031704A3 *||Dec 22, 1980||Aug 4, 1982||Western Electric Company, Incorporated||Improvements in or relating to reactive plasma processes and apparatus therefor|
|EP0261347B1 *||Jul 28, 1987||Jan 15, 1992||International Business Machines Corporation||Sputtering apparatus|
|EP0774772A1 *||Nov 8, 1996||May 21, 1997||Applied Materials, Inc.||Methods for physically etching silicon electrically conducting surfaces|
|EP2031084B1 *||Aug 26, 2008||Jan 25, 2017||FUJIFILM Corporation||Sputtering method|
|WO1996034124A1 *||Apr 23, 1996||Oct 31, 1996||The Boc Group, Inc.||Sputtering system using cylindrical rotating magnetron electrically powered using alternating current|
|WO2008046035A1 *||Oct 12, 2007||Apr 17, 2008||International Business Machines Corporation||By-product collecting processes for cleaning processes|
|U.S. Classification||204/192.23, 204/298.8, 204/298.6|
|International Classification||H01J37/32, C23C14/34, H01J37/34|
|Cooperative Classification||C23C14/345, H01J37/34, C23C14/34|
|European Classification||C23C14/34C4, H01J37/34, C23C14/34|


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A problem known to exist in most if not all countries is rapidly increasing in our dear country Nigeria. But what is poverty?
Poverty is a situation where one does not have the basic needs of life which are food, clothing and shelter.
Today in Nigeria,most people live on less than a dollar per day which is not just bad but critical as one is expected to eat not just one but three square meals a day but is unable to due to lack of money. What are the causes of poverty in Nigeria?
1) One of the causes of poverty in Nigeria is corruption. It is no news that public funds are being embezzled day in and day out by those who have access to it. These funds are meant for the public to enable them to grow and develop,but when these funds are embezzled by the government and it’s officials,the public remains in what I would call anbutter state of hell,not growing or developing but rather depreciating and finally fall into the arms of poverty which destroys and finally kills them in form of one ailment or the other. This is to say that the government has contributed and is still contributing rapidly in the increase of poverty in the country.
Another cause of poverty in Nigeria is natural disasters. When a natural disaster such as flood occurs,it renders valuable goods and properties useless which leads to the setback of the owners of such goods and properties thereby throwing them into the horrible arms of poverty to experience the horrors of life. Most times ,people inhabiting such areas become internally displaced persons, barely feeding nor clothing nor do they have good shelter. This goes on and after a while,some of them die while others live on, struggling to live under such difficult hardships.
Also,terrorism and insurgency are causes of the rapid increase of poverty in Nigeria. During terrorists attack ,a lot of lives and properties are destroyed. Inhabitants of such places become poor and internally displaced.
One of the ways this can be done is for the government to collaborate with some organizations such as the industrial training fund to organize skills, training and acquisition programs handful skills to enable them fend for themselves in the society and survive,even without having a white collar job.
Another way this can be handled is by tackling the issue of insurgency in the country. The government should put more effort in equipping the armed forces with the necessary things they require in tackling such menaces in the country by directing a lot of funds into security of the country through budgeting.
Lastly, people inhabiting areas prone to attacks by natural disasters should be evacuated by the government and better housing facilities should be provided for them.this would not just save the lives of people but would also go a long way in improving their living condition which is a big step forward in eradicating poverty in Nigeria.
In conclusion,let us all endeavor to do as much as we can to eradicate poverty from Nigeria. Let us do this so that the future may be better than the present and far better than the past. Remember,the fight to eradicate poverty in Nigeria is a collective bargain.it begins with you and me.

domain: news


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Come Inn Guesthouse Reviews
Reviews & Ratings Explained
The rating percentage is calculated from customers who booked within the last 12 months.
All ratings and reviews are based on the feedback and opinions of the customers who submitted them and do not express the opinions of Hostelworld.com. This way, you get an up-to-the-minute opinion of just how good a hostel really is.
Read our review guidelines »
good location - near hongik university and the bustling streets of the area. near the subway exit as well. stayed in both the 4-bed dorm and and double room. both rooms are quite spacious. bobby was helpful with pre-arrival queries as well (: would highly recommend this hostel for friends staying in seoul!
Bobby and James were really sweet during my stay. I loved the area. I recommend this hostel a million percent if I could. All the people I met at the hostel were so sweet, and you are walking distance from so many restaurants, bars and clubs. This has been the first hostel where I felt like it was a home. Thanks Bobby and James!
This hostel has a great location it is in the middle of the party distric thongdae. I could litterarly just roll into bed. The owner was great, he pointed us to great places to eat. There are a lot of little shops around. The rooms are kinda odd decorated but they are fine since you only sleep there. The showers feel a bit lacking in privacy since there is a cabin in which you can shower but you can't keep your clothes dry. So you have to change behind a curtain. Guests were great though!
Great location to be by Hongik University. The staff was super friendly and kind. We had a lovely stay here!
Best hostel I've stayed in. - great location - great price - feels very homely - more importantly, great people. And the best hosts. Thanks Bobbi and James
My stay was truly rewarding. Thank you, Bobby and James, for being so wonderful. They encouraged me to try new things, updated me on the local events, and were always available to answer questions. They go out of their way to make sure my needs were met. My last day at the hostel was bittersweet, I didn’t want to leave. Bobby and James cooked my last meal and even helped make last minute arrangements for my travels to the airport. I'm definitely booking my stay with them the next time I return.
- Novice Nomad
- Female, 25-30
- (1 review)
We had a great time at the come Inn guesthouse! Bobby and James treated us like family and enjoyed activities together. The location is great, right in hongdae which is the college and nightlife area. There are lots of great food and shopping selections and it's in a very safe neighborhood. The green line and the airport line is located at the same station closest by the guesthouse. They were very accommodating and I will stay here the next time I visit korea in 2015!
I stayed 4 nights in the 8 bed mixed dorm at Come Inn. It was very clean throughout the entire hostel and the staff are very friendly, they made it feel like it's your own home. The kitchen is a little small, but it's a small hostel so it works fine. The room got quite stuffy and hot at night but it wasn't unbearable. Clean sheets were provided and the beds are fine but not super comfy. It's located in central Hongdae which is a great area, 5-10 min walk to subway. Overall a great place to stay.
Bobby was superb. He definitely made sure to keep things clean and I saw him cleaning almost every time, but the women's only dorm needed a fresh coat of paint. It was also a bit humid and needed airing out in the mornings, but that's to be expected. Bobby was superbly kind and helpful, providing suggestions for places to eat and hair salons when requested. The location was really great. I would definitely recommend it!
- Novice Nomad
- Female, 18-24
- (1 review)
Come Inn Guesthouse is really great! James and bobby are very friendly and speaks good english. They will help you with anything, the hostel even got full and I wanted to stay longer and they let me stay in the staff room, that is what i call great service! The location is great close to the subway. when i book i got a nice email with good direction to the hostel so very easy to find it. good atmosphere and clean hostel. Iam now in busan but going back to Come Inn in 2 days. Alex, November 2014
I love this hostel very much.If i go seoul again,i definitely choose come inn.
This place is ideal for anyone who wants to be close to the main touristic attractions as well as the nightlife. Subway station is 3 minutes away on foot, and from this station you can go direct to both airports. The place is simple, clean and staff is awesome. The common room and the terrace upstairs makes it easy to meet other travelers. Had an amazing time there.
I had a fantastic time in Come Inn Guesthouse. I originally booked for 5 nights but i liked it so much that i wanted to prolong for 6 more nights. The location is in the centre of hongdae, so perfect. Bobby is a fantastic host, genuine, kind and fun :). Best hostel in Seoul for me.
- Novice Nomad
- Male, 25-30
- (1 review)
Enjoyed staying here! Bobby and James are the best, so welcoming and helpful. Great location, Hongdae is one of the most vibrant areas I've been in.
Going to Seoul? Just stay here. Just come, it's awesome. Everything is great.
I could not be happier with Come Inn. Bobby and staff are excellent and took care of every need. The hostel itself is decorated with souvenirs and objects that Bobby himself has collected, making Come Inn the most comfortable and homely hostel I have ever been in. The hostel is safe, clean, and perfectly located in Hongdae (great for food, drinks and shopping).
This place was really great! If you like small places that have a really comfortable feeling, this place is perfect for that. Bobby, the owner, is very very accommodating, and all the other travelers who come through are similarly awesome. This place is very cheap as well, but you have comfortable beds, clean facilities, and nice showers. Location is great too, right next to the heart of Hongdae, but surprisingly quiet at night so you don't get disturbed by all the partying outside.

domain: travel


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Street Style: 10 trend-defying looks from FAT, Toronto’s alternative fashion week
This week, Fashion Art Toronto (or FAT, as it’s known by industry insiders), has taken over Daniels Spectrum with its annual festival devoted to fashion’s experimental side. In addition to runway shows from avant-garde designers like Project Runway winner Evan Biddell (whose latest collection is inspired by androgynous cyborgs and galactic beings), the week-long event also showcases art installations, photo and video exhibits and live performances. While Toronto Fashion Week tends to bring together socialites and magazine editors, FAT attracts a far more eclectic crowd of creatives. We saw artists, designers and students showing off a mixture of bold, futuristic looks combined with classic, vintage pieces. Here, 10 edgy outfits spotted outside Fashion Art Toronto.

domain: artistic


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SMYTH COUNTY, Va. - While most of the worst flooding has been in Tennessee, there's also flooding in Southwest Virginia and it's causing problems for lots of folks, including those just trying to get to work and back.
No matter which part of the Holston River you stopped at, the water was rushing and Emergency Management officials say the water level was about five-feet above normal.
Warning signs on South Fork Road in Smyth County were up for drivers, alerting them that the ride ahead could get treacherous. "It's probably better to close the road than to get half-way up and realize you can't get back down," said driver Matt Mabry.
Some, like Mabry, took a chance and crossed anyway, "Well what I saw of it [South Fork Road], it's pretty rough with some swift water. It's going across the road there and it's in rough shape."
The South Fork of the Holston River sits dangerously close to Casey's Diner and employees took steps to keep everyone safe by closing at 2pm. "The people that work the second shift have to come all the way from Troutdale. We don't want to risk them getting stranded over here," said employee Cassie Campbell.
We took a risk to see just how bad flooding was on South Fork Road further down. We found that the raging river made it hard for drivers to navigate across one bridge.
Some say it's a risk they have to take simply to get home. "They're [drivers] as brave as we are, they don't care we live out in the country," added driver Bella Robbins.
While others hope the worst of the flooding is over. "I think the rain is going to stop and it'll go down. It happens pretty often out here," said driver Barry Ellison.
Smyth County Emergency Management officials say as of right now all roads are passable. But they want to warn drivers to be especially careful as it gets dark out.
- Bristol, Va. firefighters post billboards ahead of public hearing
- Two boys charged with reckless burning in Kingsport IGA fire
- Instantly healing technology tested on human in Kingsport
- Union High School Marching Bears performing in National Memorial Day Parade
- Red Onion inmate, D.C. sniper teen could get new trial


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MMORPG represents hugely multiplayer online pretending games. This implies that the player will interface with colossal number of players ordinarily from around the world. MMORPGs can be separated with the little multiplayer RPG’s and those played by single players.
These MMORPG’s can be played in any event, when the player is away from the game. Around the world the vast majority of them play MMOs. In each MMORPG’s the primary objective is to foster the player’s personality. This should be possible with acquiring some insight by finishing the responsibility in the games.
MMORPG games are extremely invigorating to be played and the majority of the web based gamer propose MMORPG to be one of the most mind-blowing gaming stage. A player can pick any job from the choices that are made accessible; one can pick the personality of their decision in the conjured up universe and begin playing the game for quite a long time for nothing. Every one of the game acquires own style than other.
Finding a free MMORPG online to play for nothing UFABETบนมือถือ is a difficult errand since there are numerous sites which permit these games finding the great ones is difficult. One can buy them in the wake of playing for a path rendition in order to really look at the unwavering quality of the site. As a rule the game would be for payable and in this manner these games would be of excellent illustrations, enormous multiplayer game part and a connecting with interactivity.
There are likewise many sorts which accessible free of charge in different ranges like 2D shooting, 2D RPG, 3D shooting match-ups and a 3D MMORPG. Experience mission world is one of the well known game and the majority of them decide to play it on the web. Individuals while playing game need to get done with the troublesome responsibilities and cordial fulfillment between people along with bunches is likewise energized in the game.
Fledglings can pick EVE online on the grounds that it is a multiplayer which assists in getting an encounter of the area a world and subsequently, one with canning partake in a great deal in the game. MMO games are for the most part virtual universes wherein players can create their very own person and afterward they can enjoy a large number of undertakings. Truth be told players can find an extraordinary tomfoolery in playing MMORPG games.
There are not many sites which permit free choice to play consequently, ensure that one goes for a best serve situated site to buy a game. Play the game and appreciate it by confronting troubles in the game and getting in to another level.

domain: hobby


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dough cutting machine is made of imported materials and has the advantages of biscuit machine
Through the cooperation of exceptional technicians, dough cutting machine
is characterized by its biscuit machine price. 3.
Golden Bake adopts the advanced developed experience to make the maintaince of dough cutting machine easy. 4.
Golden Bake Group makes large investment on QC in order to guarantee quality to customers. 5.
Golden Bake Group has advanced business philosophy. Company Features1.
Golden Bake Group acts as a reliable role in the manufacturing of high-quality products such as biscuit machine price. We have gained a wide range of recognition in the industry. 2.
Golden Bake established a complete R&D management system for dough cutting machine . 3.
We adopt eco-friendly manufacturing approach to promote sustainability. We have replaced some aging manufacturing equipment with energy-saving ones, such as electricity-saving equipment to help cut down electricity consumption. Our commitment to going to green production promotes us to take corresponding approaches. For example, we will strive to use cleaner and some renewable energy to offset the environmental impact caused during production.

domain: food


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Pandora Kaaki, born Mar-Anne Almosa, is a sensation in the realm of social media. Hailing from the Philippines, this 25-year-old Instagram star, YouTuber, and influencer has made waves with her modeling photos on Instagram and diverse content on YouTube. As a brand ambassador for the likes of Fashion Nova, she represents the youthful vigor and entrepreneurial spirit of the digital age. Her journey is packed with inspiration and glamour.
|Mar-Anne Almosa (Pandora Kaaki)
|Date of Birth
|29th July 1998
|Instagram personality, YouTuber, social media influencer
|Estimated Net Worth
|[Information not available]
Early Life and Background
Born and bred in Butuan, Philippines, Pandora Kaaki’s roots are an amalgamation of Filipino and Lebanese heritage. Raised by a Filipina mother and Lebanese father, her upbringing was enriched by a fusion of cultures. Her interest in fashion and modeling became apparent early on, laying the foundation for her future success.
Pandora’s career is a testament to the power of social media. With over 11.1 million followers on Instagram, she has successfully turned her passion for modeling into a thriving profession. She’s not just an Instagram model but also a YouTuber with over 971k subscribers, where she shares her travel and beauty vlogs. Her endorsements include well-known brands such as Fashion Nova, and her presence extends to platforms like TikTok and Facebook.
Pandora completed her education at Father Saturnino Urios University. While details about her field of study are scarce, her educational background has played a role in shaping her career.
A blend of grace and audacity, Pandora is known for her photogenic looks and love for swimming. Her fashion choices, especially her frequent wearing of a nose ring, are reflective of her unique style. As of now, she is single and focusing on her burgeoning career.
Estimated Net Worth
Though Pandora’s net worth is not publicly disclosed, her collaboration with major brands and impressive following on social media platforms is indicative of substantial earnings.
Pandora Kaaki’s journey from a small town in the Philippines to becoming a recognized face on global platforms is a narrative filled with determination, creativity, and charisma. Her contributions to fashion and digital content creation are influential, leaving an indelible mark on the social media landscape. Her story stands as an inspiration for aspiring influencers and models, underlining the endless possibilities in the ever-expanding digital world.

domain: celebrity


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- Cape teacher accused of assaulting student at football game (10/23/16)41
- Pedestrian killed during traffic collision on I-55 (10/23/16)9
- Scott County Sheriff Rick Walter faces challenge from criminal investigator Wes Drury (10/21/16)9
- 18-year-old killed in one-car crash Thursday morning (10/21/16)1
- One issue reveals Clinton's character (10/25/16)17
- Man arrested after dispute at school spurs brief lockdown (10/21/16)6
- One victim IDs his attacker in shooting that killed woman (10/25/16)1
- 'I feel for them' (10/20/16)1
- Hundreds turn out for VintageNOW fundraiser (10/23/16)3
- R.P. Lumber chain buys Southeast Missouri Builders Supply in Cape (10/25/16)7
CAIRO, Ill. -- Janie R. Bass, 61, of rural Cairo died Tuesday, March 22, 2005, at her home.
She was born Aug. 24, 1943, in McConley, Tenn., daughter of William French and Iva Louise Baker Tyler. She was a member of God's House in Villa Ridge, Ill.
Survivors include a daughter, Ivy Cripps of Cairo; her mother, Louise Tyler of Mounds, Ill.; six brothers, Donnie Webb of Tamms, Ill., James Webb of Marion, Ill., Mike Webb of Fancy Farm, Ky., Danny Butler and Dale Butler, both of Mounds, Eddie Butler of East Cape Girardeau, Ill.; five grandchildren; and a great-grandchild.
Friends may call after 9:30 a.m. Monday at Jones Funeral Home in Tamms.
The funeral will be at 10 a.m. Monday at the funeral home, with the Rev Harley Showalters officiating. Private burial will follow at a later date in Wickliffe Cemetery at Wickliffe, Ky.


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168 329, Princes Risborough, 5Z92, 11th September 2015
Chiltern's latest acquisition is 168 329, formerly TPE 170 309, and recently refurbished at Brush, Loughborough. Testing and driver training had commenced a couple of days earlier and continued on Friday 11th September 2015. Running as 5Z92, the train undertook a complicated itinerary, starting at 06:03 from Aylesbury to High Wycombe for reversal, then to Banbury and reverse again. It is now arriving into Princes Risborough on the up main line at 07:39½ from where it reversed again to return to Banbury. From there it headed south again to High Wycombe for another reversal to Bicester North, reverse again and back to Princes Risborough. After another reversal the train made its way to Leamington Spa and then south again to Gerrards Cross for a final reversal and return to Aylesbury by 12:48! Digital Image No. IGMP10665.
From September 2015

domain: geography


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Product Introduction：Made from commercial-grade, durable stainless steel
A scalloped end design improves grip when clamping onto any meats or ingredients
Vinyl-coated handles offer a high corrosion resistance, high abrasion resistance, heat resistance up to 180 degrees and excellent stability
Dishwasher safe and sturdy enough to handle daily restaurant operations
TOP QUALITY: AAshenwu kitchen tongs are constructed with high quality stainless steel, sturdy, heat resistance, anti-rust, anti-corrosion, light weight, easy to handle, like new forever.
ENGINEERING FOR SAFETY: Updated new design pattern for the handle, better protects your hands from cutting by the edge when you grip the handle. Easy to control the handle and to eliminate wobbling & any risk of burning your hands
MULTIPLE APPLICATIONS: Basic kitchen utensil, perfect for basic kitchen tasks, indoor or outdoor use, great for grilling corn, flipping burgers, serving salad, cutting roast meat, or used as BBQ turners and much more.


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Mrs Doubtfire (1993)
‘Sounds like an amazing woman. Too good to be true.’
After a bitter divorce that grants custody of his children to his wife Miranda (Sally Fields), voice actor Daniel (Robin Williams) goes undercover as a female housekeeper for his wife in order to be able to spend time with his children. This is a good pick for parents and children, as content is light and amusing enough for kids to enjoy while also being self-aware enough for older viewers. Williams, in a great performance, shines as a frustrated father who’s willing to do anything to prove himself to his family.

domain: entertainment


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Mixing and playout Program
Multi Channel live recording
IP camera and digital media integrations
IP-TV Kit- Includes IP-TV panel, subscription control and apps
Schedule and automate TV channels
Adaptive bitrate streaming & advanced encoding settings on the phone
Live video broadcasting box
Channels, subscription and categories Administration
Distribute articles to readers through multi-platform IPTV on Roku, Chrome Cast, Apple-tv, Amazon live TV and Android Television.
Live video mixing applications
In case of a live broadcasting program that you want qualities which will make your channel look professional, help you with all easy broadcasting and certainly will provide you with a lot of other advantages. When you try to find a live broadcasting software you do not want a sterile software that simply takes videos and places it across in the web, instead you need features and settings that will make your live media broadcasting a remarkable adventure for you and your viewers.
Multi-protocol service: HLS DASH RTMP RTSP & UDP
Easy audio mixing with advanced sound mixer
Live streaming software
PIP and transition effects for mixing
Mix several videos, streams and hardware input sources
Automated distant video receivers for satellite integration
Live Television station playout Program
Now let us briefly research the qualities of all Livebox.
SD H D 4K internet video transmitter
Social Networking supply
Supports SD, HD and also 4K plus
Integrated payment gateway
Export to outside monitor, video outputsignal, Livebox, etc..
The above mentioned features would be that which makes Livebox a more exceptional software on the list of other. It's not enough describing only about its features because it is a computer software that has a lot of products that causes it to be among their best Live streaming program. Therefore, for additional details here.
Android app for your customer to view the live flow
Multi-player & multi-encoder service
A live broadcasting software you need to learn about if you've got not come across it . A comprehensive solution for those that you're hoping from a live streaming software. Livebox is a live broadcasting software that gives you all of the essentials to make your live streaming an exceptional experience, it is a powerful software yet is simple touse. It includes amazing features which can be infrequent and required for any person who must make professional or nonprofessional live videos as it supports collection and gives high-quality videos. It allows you to easily disperse videos on societal networking platforms which also incorporates pulling existing videos from other platforms and live broadcasting it across the social networking sites. Livebox comes with both hardware and software which includes:
Be simultaneously Live multiple accounts in every Live broadcasting platform such as; YouTube, Facebook, Periscope, Twitch TV, Wowza, Livestream
Locating features that you want at a live broadcasting program might not necessarily be easy as the current industry is flooding with live streaming apps but a little research will assist you to find out about the characteristics that you need. Its not all application and applications you run into will probably have complex preferences and features hence no matter how popular it's, it might still not be exactly what you want.
IP TV technology appliance
Linux and android IP-TV box Administration
Switch to some media participant out of a single control panel
IPTV program for subscribers to see live TV in android, IOS, Linux or PC
Constructed character generator for overlaying graphics and tickers
Power to organize AD fractures
Android encoder to catch and stream from the android phone
Supports input files or apparatus in SD, HD or even 4K plus
CDN chaining and CDN Fail-over
Brand-Ed installable IPTV program
Constructed CG-editor to include overlays and scrolling text
I-OS app for your customer to view events
Appropriate for FMLE, OBS STUDIO, VMix, Wirecast and hardware encoders
Works easily with several encoding applications such like; OBS, Wirecast, XSplit. vMix. Flash Media Live Encoder.
Live broadcasting server
Branded Cell apps


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In the mode of goodness, one’s thoughts and actions are governed by wisdom and a person experiences a deeply satisfying life. When the mode of passion increases, some of the symptoms that develop are attachment, intense endeavour and uncontrollable desire and hankering. And the mode of ignorance is characterized by darkness, inertia, madness and illusion.
The Bhagavad Gita succinctly describes happiness in the three modes:
“That which in the beginning may be just like poison but at the end is just like nectar and which awakens one to self-realization is said to be happiness in the mode of goodness. That happiness which is derived from contact of the senses with their objects and which appears like nectar at first but poison at the end is said to be of the nature of passion. And that happiness which is blind to self-realization, which is delusion from beginning to end and which arises from sleep, laziness and illusion is said to be of the nature of ignorance. “(Bhagavad Gita 18.37 – 39)
Basically, long term happiness or a feeling of lasting contentment is in the mode of goodness short term pleasure that ends in guilt or pain is in the mode of passion and destructive thoughts and activities where one only imagines some form of pleasure is in the mode of ignorance. All kinds of intoxicants fall into this category.
Examples of how the three modes influence everything in this world
Food, music, and even the clothes you wear are influenced by the modes.
Fresh fruits, vegetables, grains, nuts, non-violent milk products, eaten in moderate quantity and which improve one’s quality of life are examples of food in the mode of goodness.
The mode of passion food has extreme taste and is eaten in excess. Such food causes pain and misery. It’s said that passionate food burns when it goes in, and also when it comes out! The happiness derived from such food is mere tongue deep and short lived. They create disease in the body and compromise on the quality of our lives.
To be continued…

domain: psychology


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Perov arrived in Paris, already being an artist with a fully formed personality. After the accusatory pictures that were sensational in Russia, the “uncritical” depiction of everyday life was simply impossible for him. But “ignorance of the moral life of the people” (as Perov put it in another letter) makes it impossible to answer the most important question for the critical realist: “What is evil?” In Russia this was understandable, in Paris it was not. It is unlikely that Perov had the opportunity to observe there anything similar to the “evil” of Russian reality – say, Catholic priests sipping champagne, or bribe officials performing an unjust trial. Therefore, only sketches were completely finished, which depicted, so to speak, the most accessible evil for the artist in Paris, more precisely, his victims – the urban poor, itinerant musicians, clochards.
The most famous of these sketches was “Savoyard” – a boy in tattered clothes and holey shoes, who fell asleep right on the Parisian pavement. A monkey clung to his shoulder, with which the Savoyard, apparently, gives performances, and at his feet lies a large wide-brimmed hat, into which the audience is throwing coins.
In Savoyar, Perov found a theme that would later become one of the dominant in his work – an unhappy, impoverished childhood. The child is the most defenseless creature in front of the surrounding evil, and it is especially common for stories where children are shown as victims of this evil to touch for the living, to cause pain, grief and pity.
Having exhausted the possibilities of creating a genre painting in Paris, Perov in July 1864, without spending even two years abroad, turned to the Academy Council with a request to return to Russia: “… I find it less useful to devote myself to studying a foreign country for several years, than possible to study and develop the countless richness of plots both in urban and rural life of our fatherland, ”he wrote. It is noteworthy that the concept of the usefulness of art, which in the 1860s became a measure of artistic value, sounds here.
Painting year: 1863-1864.
Painting dimensions: 40.5 x 32.2 cm.
Writing technique: oil.
Gallery: State Tretyakov Gallery, Moscow, Russia.


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CFOs are playing a larger role in Investor Relations than ever before — here’s how they can keep up with their new responsibilities.
Since the financial crisis, more and more institutional and private-equity investors are becoming primary shareholders. As a result of this shift, CFOs are taking on more IR responsibilities than ever before, according to Bloomberg. For example, organizations like the Columbia Banking System in Tacoma, Washington and the Nashville-based Pinnacle Financial Group have seen a surge in institutional ownership — from 57.6% in 2007 to 89% in 2016 for Columbia, while Pinnacle saw an increase from 26.1% to 67.6% over the same period of time.
This has been significant for the Investor Relations function at his bank because “[institutional] investors are much more sophisticated as to their understanding of bank operations,” explains Pinnacle CFO Harold Carpenter. They tend towards a hands-on approach, paying closer attention to the potential financial impact of out-of-industry events. As a result, they ask much more thorough and technical questions, and expect them to be answered by key decision makers — like the CFO.
Although CFOs at banks continue to focus primarily on tasks like compliance and interest rate management, nearly one in five CFOs in the sector surveyed said IR is a higher priority than it was even two years ago. This means that CFOs must now widen their focus to a larger swath of the bank’s operations, adapting their already busy schedules accordingly. According to Carpenter, “The CFO has to have a much deeper understanding of the bank’s business model and be able to communicate the key metrics that make the franchise more valuable compared to other banks.”
The ability to communicate quickly, clearly, and concisely is especially critical as far as IR management is concerned; one need only look to the communication nightmares of Twitter and Avon to understand the consequences of poor investor correspondence. When done properly, however, CFOs have a unique ability and opportunity to influence perceptions of the bank and help drive value.
Clear and immediate communication is most important during times of crisis. Before serving as the leader of Deloitte’s U.S. Strategy and Innovation division, Chris Ruggeri was the CFO of a telecommunications company whose largest factory in Taiwan was devastated by a typhoon. In an effort to proactively assuage investor concerns, Ruggeri and the vice president of investor relations called and left voicemails (at 5 a.m.) for the most important investors to keep them abreast of the development. Thanks to this approach, there was minimal effect on the company’s stock the following morning when the market opened.
Ruggeri’s story highlights the importance of being in near-constant contact with your investors — her proactive outreach averted what could otherwise have been a financial catastrophe. But maintaining such communication will prove especially difficult for CFOs with packed schedules. Technologies that facilitate the immediate, direct and transparent dissemination of information are therefore critical for CFOs, and of particular promise are mobile solutions that leverage investor communications. These provide both a simple and cost-effective solution that will not distract CFOs from their countless other important responsibilities, freeing up the most valuable of all resources: time.


CHUWI Hi10 Plus (chuwi-hi10plus)
Users owning this device
Mainline Kernel Status
|Y||Power Management||Uses X-Powers AXP288 Controller, mainline driver exists.|
|Y||Touch Screen||Silead GSL1680. The Silead driver is in mainline, however doesn't work on this tablet so onitake's implementation is used instead.|
|Keyboard Dock||Untested, however the dock should work fine as it worked on the Hi10 Pro.|
|Y||USB Gadget/OTG||Synopsys DesignWare Core SuperSpeed USB 3.0 Controller. Mainline kernel exists and works fine.|
|N||SDHCI||Unreliable, sometimes it does work, but most of the time are just errors.|
|P||Wi-Fi||Realtek RTL8723BS, driver is in staging, but buggy. Same problem as pine-dontbeevil|
|Y||GPIO keys||Volume up/down and Power button works fine.|
|Y||Bluetooth||Realtek RTL8723BS, mainline support existed in 4.19.|
|Y||Sound||bytcr-rt5651, mainline support existed in 4.16. Can also be replaced by Sound Open Firmware, however it is very buggy and doesn't seem to work properly.|
|Light Sensor||Capella CM3218, there's currently no mainline driver available yet. There was a patch by the company but never made it to mainline.|
|N||Sixaxis||Bosch BMA250, the driver is in mainline, however upon loads, the driver loaded and errored due to invalid chip detected by the driver.|
|Camera||OV2680 and OV8858. There used to be drivers for both of these cameras in staging (AtomISP), however it has been removed from torvalds tree due to inefficiency and not working great (lambdadroid).|
|Y||GPU||Intel Integrated Graphics, works as expected.|
|GPS||Broadcom BCM47521. No driver is currently available in Torvalds tree.|
How to enter flash mode
- Power on the system, wait until the Chuwi logo appears.
- Press Vol Up + Down at the same time.
- Power on the system
- Wait until multiboot screen appears, then click to Android.
- As soon you click "OK", hold down the Vol Down key until the display shows the Android mascot laying down open.
One of these options will remove your operating system, think twice.
Install to Android
- Boot to Android fastboot
- After that, proceed to flash using pmbootstrap.
Install to Windows (or entire disk)
- pmaports!347 Initial merge request
- Three months of using Linux on my Chuwi Hi10 Plus tablet


text:
OnTour enables you to discover local concerts with the artists you truly love. Still a manufacturing stronghold, the location features 16 Fortune 1000 companies and thousands ofothers inthe financial services, medical device, hospitality and retailing industries. Meet the artists and discover the orchestra experience from the new perspective during Behind the Notes, a pre-concert talked hosted by guest conductor Benjamin Rous. Raised with this indigenous American culture with its’ own distinctive language, cuisine and music, C.J. delivers soulful vocals together with jaw-dropping masterful accordion-driven Rock, Zydeco and Blues.
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| Dec 11, 2013
| 12:05 AM
From the rooftop of Los Angeles' old Maxwell House coffee plant, dancers in tuxedos joined others wearing horse heads to reenact Psy's "Gentleman," which is the year's top music video on YouTube.
The troupe featured YouTube stars little known to the...
| Oct 31, 2013
| 9:00 AM
Naughty Nurse has some competition this Halloween.
The YouTube video "The Fox (What Does the Fox Say?)" from the Norwegian comedic duo Ylvis has gone from viral video to cultural phenom, ranking among this year's most popular Halloween costumes,...
| Sep 30, 2013
| 6:30 AM
The most watched clip in the history of YouTube is not the anti-Muslim film that set off rioting around the world last month. Rather, it's a music video that has now been viewed nearly 500 million times.
I was peacefully unaware of this worldwide...
| Jan 18, 2014
| 12:36 PM
Korean culture, entertainment and culinary delights will be shared and celebrated during the fifth annual Coming Together in Skokie and Niles Township.
More than 60 events and activities are planned during the next six weeks as village officials join...
| Jan 16, 2014
| 8:48 AM
Mighty oaks from little acorns grow, and all that, but "The Nut Job" didn't work out that way. This 3-D animation job, a co-production of South Korea's Redrover Co. and the Canadian outfit ToonBox Entertainment, generates such little interest in the fates...
| Feb 18, 2014
| 8:34 AM
In an act of protest that might also have been an act of artistic homage, a man destroyed a vase believed to be worth $1 million at artist Ai Weiwei's museum exhibition that is currently running at the Perez Art Museum Miami.
The incident occurred on...
| Jan 22, 2014
| 8:30 PM
It sounds as if the screeches heard from last year's Doritos goat have been silenced.
After successful pop culture-tinted campaigns -- remember Volkswagen's young Darth Vader spot from 2011? -- and the influence of short YouTube videos that have...
| Jan 16, 2014
| 1:45 PM
Winter is coming to Oakton, the fictional city circa 1959 at the center of the new 3-D animated film "The Nut Job." Unfortunately, the critters who occupy Liberty Park haven't been able to store enough food to survive the season. That's of no concern to...
| Dec 27, 2013
| 10:04 AM
Music video’s wild ride...
| Jan 28, 2014
| 12:30 PM
The Seattle Seahawks and the Denver Broncos aren't the only entities who have a lot at stake when Super Bowl XLVIII debuts on Fox this Sunday (weather permitting).
With 30-second spots in the game going for around $4 million a pop, a lot of different...
| Jan 11, 2014
| 2:30 PM
Computer-animated critters have been coveting nuts since at least the Ice Age, which means squirrely Surly, star of "The Nut Job," descends from a proud if exasperated tradition of animated acorn stealers. By way of novelty, this sharp-looking but...


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NEW CONTRACT OPPORTUNITIES FOR WOMEN OWNED BUSINESSES
If you are starting a business or if you are already in business, consider these business industry codes to increase your chances for contract opportunities. Contracts have been set-aside for these industry codes. However, you must be certified as a woIf you are starting a business or if you are already in business, consider these business industry codes to increase your chances for contract oppoman owned small business (WOSB) or as an economically disadvantaged woman owned small business (EDWOSB). See Contracts for Women Advocacy Member Discounts for assistance with certification and registration.
The WOSB Federal Contract Program includes 330 six-digit NAICS codes based on the 2012 list of NAICS codes. Each NAICS code is designated as either a WOSB or an EDWOSB. Only WOSB NAICS codes are eligible for WOSB contracts. Only EDWOSB NAICS codes are eligible for EDWOSB contracts.
WASHINGTON – Women-owned small businesses can begin taking steps to participate in a new federal contracting program on Friday, Feb. 4, the U.S. Small Business Administration announced today. The new Women-Owned Small Business (WOSB) Federal Contract Program will be fully implemented over the next several months, with the first contracts expected to be awarded by the fourth quarter of fiscal year 2011.
“Implementing the Women-Owned Small Business contracting rule has been a top priority for the Obama Administration and SBA,” said Administrator Karen Mills. “Women-owned businesses are one of the fastest growing sectors of the economy. As we continue to look to small businesses to grow, create jobs and lead America into the future, women-owned businesses will play a key role. That’s why providing them with all the tools necessary to compete for and win federal contracts is so important. Federal contracts can provide women-owned small businesses with the oxygen they need to take their business to the next level.”
WOSB Federal Contract Program will provide greater access to federal contracting opportunities for WOSBs and economically-disadvantaged women-owned small businesses (EDWOSBs). The Program allows contracting officers, for the first time, to set aside specific contracts for certified WOSBs and EDWOSBs and will help federal agencies achieve the existing statutory goal of five percent of federal contracting dollars being awarded to WOSBs.
On Feb. 4, SBA will release instructions on how to participate in the program, as well as launch the secure, online data repository for WOSBs to upload required documents, on its website. SBA will also release an application to become an SBA-approved third party certifier for this program on that date. This will be the first version of the application. SBA welcomes comments and suggestions on this first version of the application.
During the ramp up period over the next several months, SBA is encouraging small business owners to review program requirements and ensure their required documents are uploaded to the repository. WOSBs also will need to update their status in the Central Contractor Registration
(CCR) and the Online Representation and Certification Application (ORCA) to indicate to contracting officers that they are eligible to participate. The General Services Administration is currently updating these systems and they are expected to be completed in April, 2011.
Similarly, the WOSB rule in the Federal Acquisition Regulation (FAR), which is the companion to the SBA rule, is now going through final review, and is also expected to be issued by April. With these pieces in place, SBA expects to see the first contracts awarded through the program by the all-important fourth quarter, when the largest percent of federal contracts are awarded.
Every firm that wishes to participate in the WOSB program must meet the eligibility requirements and either self-certify or obtain third party certification. At this time, SBA has not approved any third party certifiers. Regardless of their certification method, WOSBs must also upload required documents proving their eligibility to a secure online data repository developed and maintained by SBA.
To qualify as a WOSB, a firm must be at least fifty-one percent owned and controlled by one or more women, and primarily managed by one or more women. The women must be U.S. citizens and the firm must be considered small according to SBA size standards. To be deemed “economically disadvantaged”, a firm’s owners must meet specific financial requirements set forth in the program regulations.
The WOSB Program identifies eighty-three four-digit North American Industry Classification Systems (NAICS) codes where WOSBs are underrepresented or substantially underrepresented. Contracting officers may set aside contracts in these industries if the contract can be awarded at a fair and reasonable price, the contracting officer has a reasonable expectation that two or more WOSBs or EDWOSBs will submit offers for the contract and the anticipated contract price is not greater than $5 million for manufacturing contracts and $3 million for other contracts.
Each stage of implementation is part of SBA’s mission to make the Program efficient and user-friendly, and to ensure its benefits go only to qualifying WOSBs. SBA is excited to launch this new program to provide WOSBs with increased opportunities to compete for and win federal contracts, ultimately helping WOSBs create and retain more jobs.
As Acting Chief Counsel in the Office of Advocacy at the U.S. Small Business Administration, (SBA), Ms. Rodgers advances the views, concerns and interests of small business before Congress, the White House, federal agencies, federal courts and policymakers. She continues her role as Advocacy’s deputy chief counsel in which she coordinates and manages the daily operations and the statutory responsibilities of the office, including setting goals and standards for achieving Advocacy’s mission of encouraging policies that support the development and growth of small business. Furthermore, she coordinates presidential executive orders (EO) and congressional mandates as they affect the Office of Advocacy and is the lead on Regulatory Flexibility Act training and regulatory matters as they relate to EO coordination. Ms. Rodgers has been with the Office of Advocacy for 18 years. Prior to her role as deputy chief counsel, she was the Assistant Chief Counsel for Occupational and Industrial Safety, where she monitored safety regulations proposed by numerous federal agencies.
Over the past 21 years, Ms. Rodgers government service has included the Small Business Administration, the Domestic Policy Council at the White House and the Economic Development Administration at the U.S. Department of Commerce.
Search for Senators by Name, State, or Congressional Class and Visit their Website
Find contact information for your U. S. Representative. Call or send them an e-mail.
Listed by States. Contact your Governor. Advocate Contracts for Women!


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Emergency contraception, first-trimester abortion using a combination of the drugs mifepristone and misoprostol, can sometimes help pregnant people overcome legal and geographic barriers to obtaining an abortion via surgical procedure. Until a recent Canadian study, however, the safety of pharmaceutical abortion had never been directly compared to that of procedural abortion in head-to-head trials.
The large, population-based study tracked the safety of these two methods and found that both were safe and effective, though short-term adverse events were slightly more likely after pharmaceutical abortion.
The findings are not surprising, Carol Hogue, the author of an editorial published with the study in Annals of Internal Medicine believes: “The fact that the findings of this study are similar to what previous, more flawed studies found, lends credence to the conclusion that pharmaceutical abortion is safe and effective.”
Hogue, a professor emeritus of epidemiology at Emory University, explained that most of the differences in the safety of these abortion methods relate to the fact that pharmaceutical abortion is not as complete for some women as is procedural abortion, and must be completed via a procedure.
The risk of a problem was low for both methods: about 31 women per 1,000 who had a pharmaceutical abortion had any adverse event compared to almost 25 women per 1,000 women who had a procedural abortion.
In the first part of the University of Toronto study, data from almost 40,000 women who underwent a pharmaceutical abortion with mifepristone-misoprostol were contrasted with data from more than 65,000 women who had a procedural abortion at non-hospital outpatient clinics at 14 weeks’ gestation or earlier. In the second part of the study, researchers analyzed data from the same 40,000 women to see how the information matched up with data from almost 9,000 women who underwent a procedural abortion at nine weeks’ gestation or earlier in ambulatory settings in hospitals.
Serious adverse events seen within 42 days of either a pharmaceutical or procedural abortion and considered in the study included maternal morbidity — any health condition attributed to and/or aggravated by pregnancy and childbirth that has negative outcomes to the woman's well-being — organ damage, admission to the intensive care unit, and death. Other health complications the researchers considered when they pooled data from all three groups were hemorrhages, retained products of conception, infection or the need for a blood transfusion.
These sorts of serious adverse events occurred in 3.3 per 1,000 women who had a pharmaceutical abortion and 1.8 per 1,000 women who had a procedural abortion at 14 weeks or earlier. Serious adverse events occurred in 3.4 per 1,000 women who had a pharmaceutical abortion, akin to 3.3 per 1,000 women who had a procedural abortion at nine weeks or earlier.
When data from those having a procedural abortion at nine weeks or earlier and those having a procedural abortion 14 weeks or earlier were pooled, about 31 women per 1,000 who had a pharmaceutical abortion had any adverse event versus almost 25 women per 1,000 women who had a procedural abortion.
Longer-term concerns, such as risks to future pregnancies and childbearing, are areas ripe for future study. Hogue said she was not sure what the findings of those studies would show, however. “I think these studies will be useful, but I would be surprised if there is anything new that comes from [them],” she said. The best way to prevent unwanted pregnancies is through the widespread availability of contraception, she added.
First-trimester abortion using a combination of the drugs mifepristone and misoprostol can help pregnant people overcome legal and geographic barriers to obtaining an abortion via surgical procedure.
The rights of women to contraception and of providers to offer contraceptive services are very important because maternal mortality rates are so high, and may increase with new abortion restrictions, said Hogue.

domain: medical


text:
La Penela - Galicia
Are you a business owner in Galicia?
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Directions to La Penela
Situated in the middle of the beautiful María Pita Plaza is La Penela, a true benchmark in cooking conventional Galician cuisine. Dishes are prepared with natural simplicity, using local ingredients and recipes to create a warming homemade aesthetic; Salmagundi monkfish and prawns, tortilla de Betanzos, roast beef that falls off the knife and tasty stuffed mussels are just some of the delectable choices available to diners.
After admiring the majestic views and emblematic architecture (designed by the famous Julian Galan) that gives the area its historical character, inside customers will find the restaurant is conveniently split into two areas; a tavern area for smaller meals and casual drinks, and a more expansive dining area for those interested in set menus. Whichever setting, eating at La Penela is a must for anyone who loves typical Galician food and service.
Price range: €29-40.
Food type: Seafood, Tapas, International, Galician.
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