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20(1)If proceedings are instituted against a person for a relevant offence or relevant offences and either—
(a)the proceedings do not result in his conviction for any such offence; or
(b)where he is convicted of one or more such offences—
(i)the conviction or convictions concerned are quashed; or
(ii)he is pardoned by Her Majesty in respect of the conviction or convictions concerned,
the High Court may, on an application by a person who held property which was realisable property, order compensation to be paid to the applicant if, having regard to all the circumstances, it considers it appropriate to make such an order.
(2)The High Court shall not order compensation to be paid in any case unless the court is satisfied—
(a)that there has been some serious default on the part of a person concerned in the investigation or prosecution of the offence concerned, being a person mentioned in sub-paragraph (5) below; and
(b)that the applicant has suffered loss in consequence of anything done in relation to the property by or in pursuance of an order under this Schedule or Part VII of this Act.
(3)The High Court shall not order compensation to be paid in any case where it appears to the court that the proceedings would have been instituted or continued even if the serious default had not occurred.
(4)The amount of compensation to be paid under this paragraph shall be such as the High Court thinks just in all the circumstances of the case.
(5)Compensation payable under this paragraph shall be paid—
(a)where the person in default was or was acting as a member of the Royal Ulster Constabulary or as a person authorised under section 57 of this Act, by the Police Authority for Northern Ireland;
(b)where the person in default was a member of the Office of the Director of Public Prosecutions for Northern Ireland, by the Director of Public Prosecutions for Northern Ireland.
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The singer, 24, will play a young King Arthur who has no interest in becoming king.
In the film, she played the role of Julie Gianni together with a beautiful.
Timberlake played Robin Gibb when he presented the show in 2003.
We also have her Vanilla Sky co-star ….
Her partner in the movie was American actor Jason Segel as Jay.

domain: entertainment


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Coldplay announce tour dates for 2014
London: British rock band Coldplay has announced six international shows in support of their upcoming album `Ghost Stories`.
The band, which is led by singer Chris Martin, 37, will kick off their tour on April 25 in Germany, reportedly.
The band, made up of Martin, Guy Berryman, Jonny Buckland and Will Champion, will also stop by at the Beacon Theatre in New York, Royce Hall in Los Angeles, Casino de Paris in Paris, Dome City Hall in Tokyo and a final date at the Royal Albert Hall in London.
One of the tracks called `Another`s Arms` from the band`s upcoming sixth record talks about infidelity, which is speculated to be the reason for Martin`s recent split with actress Gywneth Paltrow.
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domain: news


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Directed by: Alejandro González Iñárritu || Produced by: Alejandro Gonzalez Inarritu, John Lesher, John Lesher, Arnon Milchan, James W. Skotchdopole
Screenplay by: Alejandro Gonzalez Inarritu, Nicolas Giacobone, Alexander Dinelaris Jr., Armando Bo || Starring: Michael Keaton, Zach Galifianakis, Edward Norton, Andrea Riseborough, Amy Ryan, Emma Stone, Naomi Watts, Lindsay Duncan
Music by: Antonio Sanchez || Cinematography by: Emmanuel Lubezki || Edited by: Douglas Crise, Stephen Mirrione || Country: United States || Language: English
Running Time: 119 minutes
Every year or so, the Academy Awards are stuffed to the brim with either depressing dramas about demographic oppression, or boring, cliched foreign films (or both); these films typically receive far more attention and adoration than their formulaic Oscar-bait screenplays warrant. I often spend half the awards season as well as the show itself rolling my eyes as film journalists and academics drool over these dry, dialogue-powered snoozers that threaten to suck all the fun out of cinema, and this year looks no different. However, sometimes the critical sphere gets things right and forms a radiant consensus on a sidestream film that truly deserves it, and this year one of the biggest, most deserving favorites likely to take home Oscar gold is Alejandro González Iñárritu’s Birdman. This sardonic yet heartfelt multi-character study is both an immensely well-written narrative and a technical marvel, combining both screenwriting prowess and irresistible cinematography into a near seamless whole. If this film goes home with the Best Picture Oscar, I will be absolutely fine with that.
Birdman tells the story of a washed-up Hollywood action star, played by Michael Keaton of all people, who made it big off the fictional titular superhero franchise and has since become a forgotten, near penniless has-been who’s desperate to retain any sense of cultural relevancy or artistic credibility. Keaton fits the role like a glove for obvious reasons and gives arguably the best performance of his career, as does co-star Zach Galifianakas in a startlingly serious (and physically trim!) supporting role, and the rest of the cast from Edward Norton to Emma Stone to Naomi Watts are all important, complex parts of this well crafted, complicated tale of personable humanity.
Inevitably, the film’s now famous “one-take story” loses some of its charm by the film’s final moments, and the ambiguous, multilayered nature of the story grows both confusing and painfully obvious on occasion, but as a whole Birdman is one of the most resoundingly fun and intellectual times I’ve had at the cinemas this year. Alejandro Iñárritu’s (I have no idea how to pronounce that, by the way) film is the golden combination of smarts and excitement (yep, even better than “dumb and fun” blockbusters), sporting a cinematic personality as entertaining and complicated as its moral symbolism. There have been few, if any, films in recent memory that utilized long takes, fluid camera movement, and tracking shots as well as this film does to convey narrative meaning and character development. Much like in Scorsese’s best films, Iñárritu’s (seriously, how do you say that?) amazing camerawork isn’t just for show, it’s used as an important tool to tell the story at hand, to flesh out narrative themes and expand upon character analyses, which is what directors are supposed and expected to do with the screenplays they’re given.
Aside from its great camerawork, most all of the characters are fleshed out surprisingly well and can be interpreted any number of ways given how one fits the open-ended story in their head. Galifianakas is perhaps my favorite supporting character as the law-abiding voice of reason, but Emma Stone and Edward Norton are on fire as Keaton’s rebellious, believably angst-ridden daughter and eccentric, uncontrollable partner, respectively. I’m not sure if its the script or just Inarritu’s acting direction or both, but everyone in this cast does an outstanding job in their roles and bats well above their career acting average, which is saying quite a lot given how talented most of these actors are.
With regards to the movie’s already (in?)famously ambiguous narrative, I have this to say: If open-ended/heavily symbolic movies were aligned on a gradient chart, less ambiguous (but also less confusing and dense) movies would be on the left of a continuum that ended with the most ambiguous and complex (but also the most confusing and indecisive) movies on the right as follows…
Less Ambiguous and Confusing More Ambiguous and Confusing
Memento (2000) <—————Taxi Driver (1976) ————-Birdman (2014)—————–Cache (2005)————-> Mulholland Drive (2001)
In other words, Birdman is about middle-of-the-road when it comes to complex, heavily symbolic artsy films. It gives you plenty to think about while rarely confusing you to the point of frustration, and that’s mostly a good thing. So now that no one is confused, go see the damn movie already!
SUMMARY & RECOMMENDATION: Innarritu directs the hell out of a smart script that makes fun of everything from Hollywood and its current obsession with superhero films to pop culture social media to Broadway snobbery to has-been (but still totally awesome) screen-actors like Keaton himself. These tracking shots and long takes are to die for. Speaking of Keaton, he’s the man here in his most personal film yet, and what a great performance he gives. He’s bolstered by perhaps the year’s best supporting cast other than Gone Girl (2014), and they in turn are supported by a bizarre but fitting percussion-heavy soundtrack that’s anything but generic.
— However… The ending (and a few other scenes) lose some of the delicious ambiguity that the rest of the film uses so well.
? People, they love blood; they love action; not this talky, depressing, philosophical bullshit. 🙂
Sounds like a great cast in a great film. Is he really flying, or is it some kind of Kundra-esque magic realist moment?
On the pronunciation thing, I’d probably say In-ya-ritoo, with the stress on ‘ya’ ( inYAritoo )
Well, that’s the thing about the movie —- it’s up to you to decide. Most of the times Keaton does something extraordinary, though, it’s usually heavily implied that it’s all in his mind. You should definitely see it first chance you get. This is one “Oscar-bait” that’s worth the Oscar 🙂
Also, thanks for the advice on the pronunciation.

domain: artistic


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Ceremony Venue: Church of St. Vincent de Paul
Evening Reception Venue: Halia at Botanic Gardens
There are some weddings where you can’t help but to feel wrapped around by the pure joy and love throughout the day. Chermaine and Paul’s wedding was one of them.
Slightly more than a year ago, I had the opportunity to document their celebration of love. Not only that they are some of the most lovely people I’ve come to know, I was also overwhelmed by warmth of their family and friends.
It was months later that I will be seeing this same group of people again for another wedding. Coming next!


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FOLLOWING the launch of the Colorado SportsCat and Chevrolet Silverado ranges, HSV has today confirmed pricing for the new Chevrolet Camaro 2SS, with the high peformance two door set to hit the road at $85,990.
THERE'S a new kid on the block for fans of the Subaru BRZ to add to their wish list, with the 2018 model gaining the new tS, a seriously STi-enhanced version of the classic budget sports coupe, along with upgrades across the entire range.
THE Toyota Camry is such a well known commodity that each new generation brings with it the expectation of, well, more Camry-ness. It's this stubbornly consistent formula that has made it thoroughly innocuous, and also the best selling car in Australia.
Exhaust Notes Australia is your destination point for the latest automotive news and reviews, on two wheels and four, as well as features and opinions.
We'll bring you the latest motoring and motor sport news from around the globe - and we'll have some fun doing it - because nobody said we had to be serious all the time.


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How long is OHEO Gulch hike?
It is 4 miles round trip, gaining 650 ft. in elevation. It takes 2 1/2 – 5 hours to hike, depending on how much nature loving you do. There are several great waterfalls along the route with the final destination fall being Waimoku Falls, which tumbles 400 ft.
Can you swim in the 7 Sacred pools?
Enjoy a Scenic Hike Note that swimming is strictly prohibited at the Seven Pools, but not along the Pipiwai Trail. Be on the lookout for wet rocks!
Where are the 7 Sacred pools?
Seven Sacred Pools (AKA Pools of Oheo aka Oheo Pools aka Oheo Gulch) are one of Hawaii’s most surreal natural formations. These “Seven Sacred Pools” along the Oheo gulch, a large ravine with jungle foliage, actually consist of about 20 swimmable pools formed along the Palikea stream.
How long is the Seven Sacred Pools hike in Sedona?
Experience this 2.8-mile out-and-back trail near Sedona, Arizona. Generally considered an easy route, it takes an average of 1 h 13 min to complete. This trail is great for hiking and walking.
Do you need reservations for pools of OHEO?
If you plan to watch the sunrise from the summit of Haleakala, you’ll need to plan ahead because the park requires reservations for watching the sunrise (to prevent overcrowding during dark hours). Note: Consult a park ranger at the information desk before adventuring.
Are the 7 Sacred Pools Open 2022?
They are permanently closed. You can do a small loop 1mile to see the lower pool and the ocean and another trail about 2miles to go see the bamboo forest. For $25 parking fee.
Can I swim in OHEO Gulch?
Swimming is possible in the Kpahulu District of the park – but only when conditions allow. The freshwater pools at Oheo Gulch are prone to very dangerous flash floods caused by heavy rains high on the mountain. Injuries and deaths have occurred.
Are the 7 Sacred pools Open 2022?
How do you get to Seven Sacred Pools Arizona?
Located in Sedona, Arizona, these sacred pools can be reached via Soldiers Pass Trail No. 66. Open daily from 8:00 a.m. to 6:00 p.m., Soldiers Pass Trail is about a 2.5-mile hike round trip that features many natural wonders.
Are the pools of OHEO open?
The entrance to Oheo Gulch / Seven Sacred pools pass thru Haleakala National Park. The park is open 24 hours per day, 365 days per year.
Where do you park for the 7 Sacred pools in Sedona?
To access the pools, you’ll need to park at the Soldier’s Pass trailhead located just off of Soldier’s Pass Road. The parking lot is very small with just 15 spaces. We opted to hike to Seven Sacred Pools via the Cibola Trail accessible from the Jordan Road parking lot, which offers many more parking spaces.

domain: geography


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Empower Wisconsin | Dec. 30, 2022
By Ben Voelkel
Gov. Tony Evers and Republican legislative leaders are talking again, proving that the holiday season really is a time for miracles. It was more than two years between meetings for Evers and Assembly Speaker Robin Vos (R-Rochester). Evers and Senate Majority Leader Devin LeMahieu never met in person over the last two years.
But for this thaw to last, Evers needs to show executive leadership and come to the table ready to demonstrate a genuine interest in working across the aisle on non-partisan issues.
First up: Evers should follow the common sense urging of Wisconsin Republican leaders and ban TikTok from state government devices. After weeks of delays and mounting evidence against the popular video-sharing app, Evers told reporters Thursday he’ll think about it.
Now, let me first acknowledge something: I think TikTok is horrible.
Like most social media, it’s a tremendous waste of time. Kids and teens are now spending more than an hour and a half per day on the app. This at the same time obesity rates skyrocket and student test scores plummet.
But a state ban on TikTok really isn’t about any of those things. The reality is TikTok has no place within a wifi signal of the State Capitol because it’s reasonable to believe that TikTok is a Chinese spy front that represents a massive cyber security risk that puts the whole state at risk.
New research from the Wisconsin Institute of Law and Liberty shows why. TikTok is able to access the keystrokes of users – not just when they’re on the app, but anytime they’re using the device the app is downloaded on. That capability could allow an easy backdoor for hackers based in China (or elsewhere) access to critical government systems, like what happened in a 2019 hacking incident that brought the city of Baltimore to its knees. While not conclusively tied to Chinese hackers, a similar attack on Wisconsin systems – say Wisconsin’s emergency management operations – could have deadly consequences.
Recent reports have also revealed that TikTok’s parent company, the Chinese Communist Party-aligned ByteDance, used the app to track the movements of journalists from Forbes and the Financial Times to determine who they were meeting with. Tracking the location of a state elected official using TikTok – say, for instance, a lieutenant governor – could pose physical security risks in addition to the cyber security threats.
So far, Republicans like Wisconsin’s Rep. Mike Gallagher have led the charge to ban TikTok, but it’s far from a partisan issue. Governors of 15 states – from both parties – have banned the app from state phones. The U.S. Senate recently passed a ban of TikTok on federal devices unanimously. The House of Representatives has banned TikTok on its government-issued devices. And during his 2020 Presidential campaign, then-candidate Joe Biden recognized the potential danger of the app and ordered his campaign staff to delete it from their phones.
Evers’ rationale for not being more aggressive in banning the Chinese spyware is that TikTok is only downloaded on about a dozen state devices. That argument doesn’t hold water. If the footprint is minimal, then there shouldn’t be much of a disruption at all in banning it. The tradeoff between posting a few funny videos or protecting the state against a potential hack is a no brainer.
Voters granted Tony Evers a second term and he has an opportunity to prove he can put partisanship aside and work with Republicans to do something in the best interests of all Wisconsinites.
Does Gov. Evers have the fortitude and political courage to do so?
He’s on the clock.


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Earlier this week, President Obama asked his cabinet to figure out ways to cut costs. Now he’s asking the rest of his staff – as in the entire federal bureaucracy. Maybe that’s a way to get past the criticisms that the $100 million in savings he sought from his Cabinet was too small.
“We’ll establish a process through which every government worker can submit their ideas for how their agency can save money and perform better,” said Mr. Obama in his weekly address. Those with the best ideas get to meet him sometime later this year.
There are other incentives: Agencies that figure out ways to cut costs will get to keep some of the money “to invest in programs that work.”
Mr. Obama also said he would also solicit advice from people in the private sector at a “a forum on reforming government for the 21st century” and reiterated his support for pay-as-you-go rules in Congress.
But the budget talk is likely to remain overshadowed by the more dramatic revelations about harsh interrogation techniques that have emerged over the past week. The continuing disclosures are likely to encourage Congressional
supporters of a public inquiry who, despite Mr. Obama’s opposition, plan to push ahead.
Reporters will have an extra opportunity to press Mr. Obama on interrogation questions on Wednesday, when he holds his third prime-time press conference to mark his 100th day in office. Kind of a big production for what his spokesman, Robert Gibbs, called a “Hallmark holiday,” no? The Times’s Sheryl Gay Stolberg writes that while the milestone might be a “trumped up journalistic convention,” the White House has decided to take advantage of it, with several events and sophisticated media management.
Speaking of media management, have you noticed how Michelle Obama has turned around her image since the early days of the campaign. It didn’t exactly happen organically (though White House officials argue otherwise).
One subject likely to be examined in the 100 Days packages is Mr. Obama’s record of standing firm vs. compromising in legislative battles. While he has tended toward the latter over the past few months, he is now pushing for an aggressive approach to health care in Congress that would prevent Republicans from filibustering a Democratic package. The Times’s Carl Hulse writes that “the new stance suggests he may be much less willing to compromise when it comes to health care, his top legislative priority, even if it means a bitter partisan fight.”
One development that would help Mr. Obama would be to have Al Franken, the Democratic Senate candidate from Minnesota, seated. But there’s not likely to be a conclusion in that race until June, when the state Supreme Court has said it will hear the case. However, New York’s 20th Congressional District did finally settle its race, with Scott Murphy, the Democrat, officially taking the seat vacated by now-Senator Kirsten Gillibrand after a protracted (though, of course, nothing compared to Minnesota) court battle.
Perhaps Mr. Obama could get some strategic advice from Robert M. Gates – and we don’t mean on military strategy. The Los Angeles Times reports that the defense secretary is “poised to push through what many consider a historic remaking of the military with relative ease, averting an expected battle royal with contractors and lawmakers.”
Mr. Gates’s department is working with the Homeland Security Department on a plan that would put National Guard troops on the United States-Mexico border to help fight the drug war, The Washington Post reports. Meanwhile, Homeland Security Secretary Janet Napolitano appears to have healed a rift with veterans’ groups after offering an apology.


text: RADA born in Ukraine, she is always striving to find new music, never be constrained by any genres, and it shows in her work. Later decided to move to Asia and begin to engage in creative activities. Spent their performances in such countries Taiwan, China, Indonesia, Thailand. Worked on big festival "Loft Asia Brand", "Asia Ship". In 2017 release Mixtape#1, Mixtape "Introduce Bass Mind". Already start 2018 and she released new Mixtape "BASS LINE" you can definitely experience a Mature integration of various influences from Bass House, Trap, Future Bass. In her evolution as an artist, one thing remains consistent, her ability to get the party started with her energetic sounds.


Bowen went so far as to start crowdfunding pages to aid in the child's medical treatments and operations, claiming Christopher had terminal cancer and needed a lung transplant, heart surgery, and leg braces. "I am very concerned that mother has moved from exaggerating symptoms to inducing symptoms", Dr. Suzanne Dakil told investigators during a review of the child's medical history.
Though he believes CTE is to blame for his erratic behavior, doctors can not diagnose the disease until after death. "I could be Aaron Hernandez", Johnson said. 'A bittersweet thing: I'm going to be free of everything that's holding me down, ' Johnson said. He calls the risky impulses he has " demons ", which sometimes urge him to harm others and sometimes goad him to jump off a building to his death.
They have demonstrated the technology with arugula, kale, spinach and watercress so far and it should work on all types of plants. The scientists showed they can also turn off the light by adding nanoparticles with a luciferase inhibitor, so they think they could eventually create plants that stop emitting light in response to conditions like sunlight.
Argon is normally used to stop livers bleeding during operations, by sealing blood vessels together using an electric beam. Its likely Dr Bramhall believed his initials would disappear as the patient healed due to the fact the argon beam doesn't damage the liver and its marks do disappear eventually.
The reporters had been working on stories about a military crackdown on the Rohingya Muslim minority in Rahkine State that has caused nearly 650,000 people to flee to neighboring Bangladesh, Reuters reported.The Ministry of Information said in a statement on its Facebook page that the journalists and two policemen face charges under the British colonial-era Official Secrets Act.
Yet it was West Ham who sensed the chance for victory and it nearly came when Hernandez suddenly found himself free in the area only to lift his shot against the crossbar, with the ball bouncing perilously close to the line. Wilshere blazed a shot over the bar from close-range with 20 minutes remaining and believes he should have capitalised on the opportunity. Not that West Ham have a right to expect anything.
The king renewed his condemnation of President Donald Trump's decision, saying it "represents an extreme bias against the rights of the Palestinian people in (occupied) Jerusalem that have been guaranteed by worldwide resolutions". We've always said that Hezbollah is the problem and that it is endangering the stability in Lebanon. Following US President Donald Trump's announcement that he would be authorizing the move of the US Embassy to Israel from Tel Aviv to the de facto but disputed ...
Hawse. At this same time past year, there were not any. It should also put all New Yorkers on alert to take precautions, such as frequent hand washing and avoiding people who show signs of illness. Flu season typically lasts until mid-May, and often peaks in February. "It is important to remember that the flu season in the U.S.is just starting to ramp up, and no studies on vaccine effectiveness for the Northern Hemisphere have been completed so far", said Mick Bolduc, DPH's vaccine ...
However after three surgeries , to move her heart into her chest and create an artificial rib cage and sternum, she is now believed to be the first successfully treated case of ectopia cordis in the UK. But it wasn't, it was her heart. "We were told that our best bet was to terminate and my whole world just fell to bits", Wilkins told The Telegraph .
American Century Companies Inc. bought a new position in shares of Carrizo Oil & Gas during the second quarter worth $4,147,000. (NasdaqGS: CRZO ) is -0.380981. Therefore 80% are positive. Cyrusone Inc had 55 analyst reports since August 6, 2015 according to SRatingsIntel. The stock is now showing YTD performance of -44.9 Percent.
The new process, announced by Prime Minister Theresa May in her conference speech in October, will require anyone objecting to donation to opt-out, raising ethical questions for some. Figures from NHS Blood and Transplant show that in the past year around 1,100 families in the United Kingdom decided not to allow organ donation because they were unsure, or did not know whether their relatives would have wanted to donate an organ or not.
It was a bowl of mutton soup that spilled the beans. To ensure that nobody became suspicious about Reddy's disappearance, Swati hatched a plan to swap her dead husband with Rajesh by altering his physical appearance with plastic surgery.
Aviva Pcl stated it has 1.14M shares. AbbVie Inc. (NYSE: ABBV ) has risen 10.63% since December 13, 2016 and is uptrending. It has underperformed by 6.07% the S&P500. Rockland Tru Com stated it has 12,891 shares or 0.15% of all its holdings. Waters Parkerson And Ltd Liability Company has invested 3.28% in Facebook, Inc.
With the likes of Luan , Arthur and Lucas Barrios Gremio have a unsafe attacking side that will undoubtedly be the favourite over a Pachuca side that has struggled in the Apertura and failed to reach the Liga MX playoffs. "But I'm delighted, I need to congratulate my players". We had to overcome all those difficulties and now we are in the final. "We watched the match against Wydad and it was intense".
Houston took a good punch from Portland, which was trying to end a three-game home court losing streak. Holiday cut through the defense because, well, it's like they weren't there. Then we want to be in the top five. Once we can find a way to really do it night in and night out, it's no panic mode, but we have to start playing better.
The match was declared forfeited and awarded in favour of Algeria, with three points deducted from Nigeria's total tally in the World Cup qualifiers. He had previously picked a yellow card in a second round first leg tie against Swaziland in 2015.
IG Western range Hemanth Nimbalkar was not inside the auto and escaped unhurt while his driver and other police officials sustained injuries when miscreants pelted stones at them. Another BJP leader R Ashoka said party leaders will also be meeting Union Homer Minister Rajnath Singh soon to apprise him of the situation in the state.
Meanwhile, both Saraki's legal team and the EFCC team have hinted that they will both cross-appeal the decision of the Court of Appeal at the Supreme Court. In count four charge, Saraki was accused of making false assets declaration at the end of his tenure as Executive Governor of Kwara State in 2011 and on assumption of office as a senator in 2011 in respect of a property at 17A McDonald, Ikoyi Lagos.
Per in The Telegraph's report, she said: "This important study provides further, clear evidence that postmenopausal women can significantly reduce their risk of breast cancer by taking steps to lose weight". As a result, such patients often experience hot flushes and night sweats, among other side effects that are also commonly experienced post menopause.
The team brought back Bryan Braman , nominally a linebacker but basically a strong tackler and blocker on special teams. The ACL tear, though, that did unquestionably and significantly derail a mobile quarterback's career was that of Robert Griffin III in January 2013.


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Lower temperatures, less rainfall for 2011
Tuesday, Feb. 7, 2012
By Brian Clark, College of Agricultural, Human and Natural Resource Sciences
PROSSER, Wash. — From record heat to record cold and everything in between, the Washington 2011 weather year had it all.
"Despite the unusual weather in Washington last year, it can be understood more easily by thinking of 2011 as a year in which the seasons were delayed by one month,” said Nic Loyd, meteorologist for Washington State University's AgWeatherNet.
Temperatures rose into the 60s at times in mid-January and again in mid-February of 2011. However, a late-season arctic blast sent temperatures tumbling into the single digits in central Washington on the morning of February 26. This unusual event heralded the beginning of what was to be the coolest and windiest spring in recent memory in central Washington.
"Despite the delayed crops that resulted from the below normal springtime temperatures, there were benefits as well,” said Gerrit Hoogenboom, director of AgWeatherNet. "The mountain snowpack increased throughout the spring, which led to an abundant summer water supply.”
Cool conditions continued into July, and normal summertime heat didn’t begin until August. Summer finally arrived in September, with near record heat in many locations. Areas north of Wenatchee surpassed 100 degrees and Prosser recorded high temperatures above 90 degrees for five consecutive in mid-September.
The first autumn frost in the normally cold locations of central Washington came late, allowing for a safe harvest of a delayed apple crop. December had almost no precipitation in Washington until Christmas. The heavy rain that began the last week of the year saved western Washington from experiencing the driest December on record. Overall, the rainfall was still below average.
All in all, 2011 ended just as it had begun: with very unusual weather. Temperatures in Washington were generally below average. The 2011 average temperature at WSU Prosser was one degree below average and both the high and low temperatures were cooler than normal. Despite the cool conditions, 2011 was far from a record year. For the period of record (1990 to 2011), 1993 was the coolest year, with an average temperature of 49.4 degrees.
A more detailed review of Washington’s 2011 weather is available at the AgWeatherNet website under the News link. AgWeatherNet is a web-based, public system that provides access to near real-time weather data, along with decision aids for agricultural producers and other users.


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Charles Wycherley Independent Estate Agents are delighted to present a most attractive tile hung period cottage, built probably in the 17th Century but having medieval fragments within the house and thus considered as a Grade II Listed property to be of national and special interest. The property has a wealth of original features to include to its 19th century shop front. There are large exposed period beams including ceiling beams to the 21`(6.4m) sitting room, an arched beam to the first floor landing and main front bedroom and an exposed strut to the second floor ‘L` shaped bedroom which also has original exposed medieval wattle and daub. There is a magnificent bath/shower room mixing old and new and having a superb Victorian roll-top bath, an appropriate fitted kitchen and gas central heating. A major feature is the 26`6 (8.11m) brick built garden studio in the good size garden, which is useable for work, culture or living. The property has been, to the majority, re-built including the studio and restored to high Listed/Heritage standards. It is also fully insulated using traditional materials.
The property is situated on the quieter spur of Malling Street, on the little cul-de-sac section by the entrance to Cuilfail and yards from the eastern mouth of Cliffe High Street. All 3 superstores are within easy level walking distance and the attractive pedestrianised Cliffe High Street with its individual shops, public houses, cafes and restaurants, with the original Bill`s, along with Lewes High Street and the Eastgate Centre. Lewes` historic core has so much to offer with its historic period buildings and yet within 10 minutes walk to Lewes Railway Station (with trains to London Victoria in 1 hour and London Bridge 90 minutes) opposite the exciting new Depot Cinema.
ACCOMMODATION WITH APPROXIMATE MEASUREMENTS COMPRISES:-
‘L` SHAPED BEDROOM 1
16`4 x 10 (5m x 3.05m). Original sash window with westerly outlook and attractive town view towards Harvey`s Brewery and Lewes Castle. Further sash window looking east to the rear garden. Exposed floorboards and roof beams. Double radiator. Pine platform . Exposed wattle & daub. Recessed spotlights. Cloaks rails. Fitted shelves. Latch door and painted wooden stairs with 2 storage cupboards and further storage area, reputed to be a ‘priest hole`. Panelled staircase area leading to:-
Characterful U-shaped galleried landing with small minstrel area with fitted shelves. Exposed floorboards and original upright beams and ceiling beams. Wood panelled stairs. Wall lights. Original wooden balustrades, hand rail and newel post. Spotlights. Door to second floor staircase.
12`5 x 11`10 (3.81 x 3.66) with additional dressing area. Sash window with superb view west towards the town centre. Exposed brick fireplace and large clay tiled hearth and wooden mantle. Magnificent arched beam and wall beam upright. Full-width wall beam and ‘T` beam to south internal wall. Exposed wide floorboards. 3 wall light points. Storage cupboard. Panelled wall with folding doors opening to bedroom 3.
DRESSING AREA/potential ENSUITE SHOWER ROOM
4`10 x 4`9 ( 1.53m x 1.49). Chimney breast . Exposed floorboards and wall beam. Electric light.
9`9 x 9`3 (3.02 x 2.83m). Sash window with outlook to the rear garden and Studio. Exposed floorboards. Wood panelled wall with folding doors to bedroom 2. Double radiator. 2 wall light points.
Magnificent bath/shower room having Victorian roll top bath with clawed feet. Double shower unit with independent shower, glass screen, double shower tray and tiled walls. Extractor fan. Recessed spotlight . ‘Butlers` wash basin with granite top and double bracketed wooden cupboards under. Low level w.c. Double radiator. Conservation roof light to south side and sash window to the east overlooking the rear garden and studio.
21` x 13`6 (6.40m x 4.15m). Double aspect room with casement window to Malling Street and western aspect to Lewes town centre. Sash window to rear garden to the east. Exposed brick floor. Exposed wall and a plethora of ceiling beams. Magnificent original large fireplace with brick hearth and wooden mantle. Further ornate wooden mantle with cast iron woodburner. Fitted original bookcase. Smoke alarm. Telephone point. Glazed door. Walk-in cloaks/storage cupboard 6` x 4`5 (1.83m x 1.37m) with cloaks hanging rail, gas and electric meters, fuse box, exposed brick floor and fitted shelves. Door to:-
Painted wooden staircase with panelled walls to first floor. Clay tiled floor. Deep larder cupboard with fitted shelves and boarded walls. Book shelves. Door to:-
11` x 8`1 (3.35m x 2.47m). Sash window to east facing patio. Fitted cottage kitchen with ceramic 1.5 bowl sink unit and mixer tap. Thick oak wood worktop with double cupboards under. Space for dishwasher and washing machine. Point for free standing gas cooker. Further oak worktop with drawer and fitted shelves over. Space for fridge/freezer. Wood panelled wall. Small base cupboard. Spotlight rail and further spotlight. Radiator. Cupboard housing Alpha CD 28C Gas fired boiler and thermostat. Door to rear garden.
INDEPENDENT GARDEN STUDIO
26`6 x 9` (8.11 x 2.74m). Tall arched double sloping ceiling, 9` (2.74) height with 2 conservation roof lights. Double patio doors with arch lights over. 2 double glazed windows to side pathway. Cast iron woodburner with steel flue. Boarded floor. ‘Butlers` sink with mixer/lever taps with mahogany drainer and cupboards under. Fitted shelves. Storage platform over. Door to:-
6` x 4`7 (1.83m x 1.43m). Window to garden. Glazed shower cubicle with tiled walls and shower tray. White suite of contemporary wash basin and low level w.c. Extractor fan. Radiator. Bathroom cabinet.
Brick patio seating area which receives the morning sun to the east. Brick pathway past the studio to further rear raised brick patio with timber shed. Brick steps to small upper section.
Please note we have not tested any apparatus, fixtures, fittings, or services. Interested parties must undertake their own investigation into the working order of these items. All measurements are approximate and photographs provided for guidance only.

domain: history


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Richard Foster and former Coventry City midfielder Danny Swanson have been fined four weeks' wages by St Johnstone for clashing with each other against Hamilton.
The pair were suspended by the Perth club pending an investigation after being sent off at half-time in last weekend's 1-0 Ladbrokes Premiership defeat at the SuperSeal stadium for an on-field altercation seconds after the interval whistle sounded.
Both were also banned for the 1-0 home win over Hearts at McDiarmid Park on Wednesday night and Saturday's trip to Inverness.
St Johnstone announced the punishment in a statement published on their official website and revealed some of the money from the fines will help pay travel costs for Saints fans for remaining away matches.
The statement read: "St Johnstone FC have completed their investigation into the circumstances surrounding the dismissals of Richard Foster and Danny Swanson at the game v Hamilton Academical FC on 1st April 2017 and have concluded disciplinary hearings for both.
"Richard Foster and Danny Swanson fully accept that they are ambassadors for the club and role models for young fans everywhere.
"They accept that their conduct fell far below that which is required of them as professional football players with St Johnstone FC and that they brought the club into disrepute.
"The sanctions imposed upon them - a fine of four weeks' wages - were the most severe, short of summary dismissal.
"The players have accepted the sanctions without question and they wish to apologise unreservedly to the supporters of the club for their behaviour.
"Both players have expressed a desire for a proportion of the fines to be utilised for free bus travel for supporters to the remaining away matches this season and the club is in full agreement with this request.
"The players will now return to training and playing duties where they can channel their energies into contributing to the continued success of the club."


|Publication number||US6288357 B1|
|Application number||US 09/501,702|
|Publication date||Sep 11, 2001|
|Filing date||Feb 10, 2000|
|Priority date||Feb 10, 2000|
|Publication number||09501702, 501702, US 6288357 B1, US 6288357B1, US-B1-6288357, US6288357 B1, US6288357B1|
|Inventors||Timothy S. Dyer|
|Original Assignee||Speedfam-Ipec Corporation|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (5), Referenced by (32), Classifications (23), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Field of Invention
The present invention relates generally to a method and apparatus for smoothing surfaces having fine irregularities, of the order of a few microns and up to about 200 microns in size. In particular, the method and apparatus of the invention is useful in planarizing or polishing the surfaces of semiconductor wafers, precision optical lenses and the like using an ion beam in the presence of a radio frequency generated plasma.
2. Description of The Related Art
With advances in technology, there is increasingly a demand, in certain technologies, for precision planarization or polishing of surfaces for a variety of purposes. For example, highly polished precision surfaces are needed in optics and in the fabrication of semiconductors, using silicon wafers. Indeed, as explained below, requirements in the two technical fields are frequently interrelated, in that optical instruments are used in the manufacture of semiconductors.
The fabrication of very large scale integrated circuits on silicon wafers is a process requiring extreme precision because of the very fine details of the circuits. Indeed, the width of circuit lines are continually decreasing as the technology advances, and is now in the range of 0.18-100 microns. Since the circuits are produced using photolithographic techniques, extremely accurately ground lenses are required to provide fine detail. As a necessary consequence of providing such precise focusing, the lenses lack depth of field, i.e., an image is accurately produced only at a specific distance from the lens, and any deviation in this distance produces an increasingly unfocused or fuzzy image. Therefore, the surface onto which the image is projected must be as perfectly planar as possible to eliminate out-of-focus image fuzziness. A failure to maintain planarity exacerbates the problem as additional layers are formed on the nonplanar surface resulting in an increased proportion of defective semiconductors that must be rejected.
At present, the standard technique for restoring surface planarity, after certain processes that lay down component layers on the wafer, is chemical mechanical planarization (CMP). During this process, the surface of the wafer is polished with a polishing pad, and in certain instances with a chemical slurry, to remove excess material and also to replanarize the surface. When a slurry is used, it contains an abrasive, such as silica or alumina, and chemical additives that are designed to selectively react with and soften the composition of those components that must be planarized or removed from the wafer surface. Chemical slurries are not always used, and certain planarization and polishing steps may be carried out using a “fixed abrasive” in which an abrasive substance or composition is fixed in a polishing pad or other substrate that is used to polish the wafer surface.
This summary of invention section is intended to introduce the reader to aspects of the invention and is not a complete description of the invention. Particular aspects of the invention are pointed out in other sections hereinbelow, and the invention is set forth in the appended claims which alone demarcate its scope.
The invention provides a method of planarizing a surface of a substrate that has micro irregularities using an ion beam of suitable energy, while the surface of the substrate is energized with radio frequency generated plasma. The technique of the invention may be applied to a wide range of substrates, including semiconductor wafers (as a substitute for chemical mechanical polishing), hard disk fabrication (for computers), optical lenses, and other devices that require exceptionally accurately planarized or smoothed surfaces.
In accordance with one aspect of the method of the invention, a substrate is placed in a holder in a vacuum chamber equipped with a radio frequency inductive plasma generator. The surface to be polished or planarized is exposed to a source of energetic ions, such as an ion gun. The chamber is filled with a gas, and the gas is ionized with radio frequency energy to form inductive plasma that surround the substrate. An ion beam is mounted above the substrate and directed to scan the surface of the substrate that must be polished or planarized. The ion beam is selected to have sufficient energy to remove surface micro irregularities from the surface of the substrate. Preferably, the ion beam milled surface is scanned and inspected for surface smoothness characteristics. When a predetermined surface smoothness characteristic has been achieved, the ion beam milling is discontinued.
The method of the invention eliminates the need for chemical mechanical planarization, and provides a method of achieving surface smoothness and planarization, without generation of hazardous waste for disposal. Moreover, the method is exceptionally well suited to automation, and may be carried out at high speed resulting in a high throughput of polished substrates. Further, the technique is flexible in that an appropriate selection of ion beam energy and plasma may be custom tailored for a particular substrate. Accordingly, the invention provides many advantages over prior art techniques, such as chemical mechanical polishing.
The following drawings are illustrative of embodiments of the invention and therefore do not limit the scope of the invention, but are presented to assist in providing a proper understanding of the invention. The drawings are not to scale, and are intended for use in conjunction with the explanations in the following detailed description section.
FIG. 1 is schematic view of an ion beam planarization apparatus useful in an embodiment of the method of the invention;
FIG. 2 is a flow chart of an embodiment of the inventive method of ion beam milling;
FIG. 3 is a cross-sectional view of a portion of a semiconductor wafer prior to processing in accordance with the methods of the invention;
FIG. 4 is a cross-sectional view of a portion of a semiconductor wafer during processing in accordance with an embodiment of the method of the invention; and
FIG. 5 is a cross-sectional view of a portion of a semiconductor wafer after processing in accordance with an embodiment of the method of the invention.
This section describes aspects of the invention, and points out certain preferred embodiments of these aspects. This section is not intended to be exhaustive, but rather to inform and teach the person of skill in the art who will come to appreciate more fully other aspects, equivalents, and possibilities presented by the invention, and hence the scope of the invention as set forth in the claims which alone limit its scope.
The method of the invention may be applied to any of a variety of substrates that must be treated to provide a smooth surface, whether planar or not. The method is best suited for application to surfaces that contain “micro irregularities”, so that these irregularities may be selectively eliminated or reduced in size, as required.
In accordance with the specifications and claims, the term “micro irregularities” refers to irregularities of the order of magnitude found on the surface of semiconductor wafers that are undergoing treatment to form semiconductors thereon, and that must ordinarily subjected to chemical mechanical polishing (or other polishing treatment) to replanarize the wafer surface (or to polish off surface features) in order to produce useful semiconductor devices. Accordingly, the micro irregularities are ordinarily in the micron size range, ranging from about 0.15 to about 200 microns in size, with varied pitch and density.
In accordance with the invention, micro irregularities are reduced or eliminated by immersing the substrate in a radio frequency generated plasma, and milling the substrate surface with an ion beam of suitable energy. While planarization of the surface is desirable in certain circumstances, for instance when a semiconductor is undergoing ion beam milling of its surface, in other circumstances the ion beam may be used to produce a nonplanar surface, for example when an optical surface is being treated to improve smoothness, but to maintain an optically correct curvature.
An embodiment of a suitable radio frequency plasma ion beam milling apparatus is illustrated in FIG. 1. The apparatus 100 includes a vacuum chamber 110 that may be constructed of any suitable material, such as stainless steel or aluminum. In certain instances, it may be desirable to line the interior of the chamber with a non-reactive substance, such as a ceramic or quartz. The chamber should be sized to contain the substrate S without restricting the flow of gas or plasma around the substrate S surface. In the case of treatment of a semiconductor wafer, the chamber 110 is preferably cylindrical with a diameter in the range from about 12 to about 20 inches, and a height in the range from about 5 to about 25 inches.
The substrate S is supported and preferably held fixedly in the chamber by an electrostatic chuck 120, or a holder of another type, dependent upon the nature of the substrate being milled. If the holder 120 may allow for rotational or translational movement of the substrate S with respect to the chamber 110, or an ion beam 130 emitted from an ion beam source 135. As indicated, the ion beam source should be located relative to the holder 120 so that the ion beam 130 may be directed to scan the surface of the substrate to be milled by the beam.
In the event that the substrate S is a semiconductor wafer, then holder 120 is preferably an electrostatic chuck that is driven by a power generator subsystem 125 of the apparatus, through a bias matching subsystem 127. The bias system 127 provides an efficient transfer of power from the radio frequency power generator 125 to the chuck 120. In a preferred embodiment, where a semiconductor wafer is being milled, generator 125 preferably has a power production capacity of at least about 5 kilowatts at an oscillation frequency of about 2.0 to about 13.5 MHz.
The vacuum chamber 110 is in fluid communication with the inlet of a roughing pump 160 through conduit 162 equipped with a vacuum valve 165. Preferably, pump 160 is a “dry scroll pump”, however, any other type of oil-free pump may also be used. Preferably, conduit 162 and vacuum valve 165 are heated to reduce any buildup of contamination from gaseous products produced during the milling process. Additional vacuum pumping to remove gaseous materials formed during the milling process is applied by a high vacuum pump 170. The high vacuum pump may be selected from those commonly used for such purposes, for example, turbo pumps, molecular drag pumps, or ion pumps. Most preferably, high vacuum pump 170 is a cryopump.
Preferably, the pumps 160 and 170, as well as the vacuum chamber 110, are supplied with pressure gauges and transducers (for example, ion gauges, cold cathode gauges, capacitance manometers, Pirani gauges) for monitoring purposes.
The vacuum chamber 110 is surrounded by a radio frequency antenna 140. The antenna 140 is powered by a radio frequency power generator subsystem 145, that routes power to the antenna via a radio frequency bias matching subsystem 147. The bias subsystem 147 provides a high efficiency power transfer from the power generator 145 to the antenna 140. Once antenna 140 is energized, it excites gases within vacuum chamber 110 to create a plasma.
Generator 145 preferably has a power production capacity of at least about five kilowatts and an oscillation frequency of about 2.0 megahertz. RF power supplies use federally mandated frequencies set by the U.S. Federal Communications Commission (FCC) that are allowed for equipment usage. For this application, 1.8, 2.0, 8.0, and 13.5 MHz are the best frequencies to use although others may also be useful. Higher frequencies than 13.5 MHz are not recommended in vacuum equipment, and may slow down the etching process. As for power requirements, the inductive plasma subsystem (RF coil around the system) should preferably be powered by a 3-5 KW RF generator for a 200 mm wafer. Power will scale proportionally to the wafer surface area, therefore a 300 mm system would require about 6 to about 10 KW. All frequencies listed above can be used for the inductive coil or wafer pedestal/support. The wafer support platform should be electrically isolated from the rest of the system. Power requirements and scaling for the wafer support are similar to that of the RF antenna. ENI of Rochester, N.Y. makes suitable power supplies although others are also useful. These power supplies are designed to power a reactive load of 50 ohms. An active or passive impedance matching network should be placed in-between the process chamber and the power supply to effectively couple the power.
In a preferred embodiment of the invention, when the substrate S is a semiconductor wafer, the gas supplied into chamber 110 is argon. However, the invention is not limited to the use of argon gas and any one of krypton and helium may also be used. The transport of gas into the chamber 110 is from gas supply bottle 180 through conduit 182 supplied with mass flow regulating valve 184. Methods for controlling gas mass flow, pressure and other variables are well known in the art.
As shown in FIG. 1, chamber 110 is equipped with an ion beam source 135, that generates an ion beam 130, able to scan the surface of substrate S. Ion beam source 135 is preferably a high current source with a beam current greater than about 1,000 milliamps, and an adjustable energy within the range from about 100 to about 2,000 electron volts. (eV). Moreover, source 135 preferably has a spot size (beam diameter) within the range from about 15 to about 30 centimeters, depending upon the nature of the substrate to which the beam must be applied. A preferred ion beam source 135 is commercially available from Commonwealth Scientific of Fremont, Calif., in particular, the radio frequency inductively coupled high current (1700 milliamps) source providing a 30 centimeter diameter spot size. This particular instrument also provides an adjustable energy range from about 50 to about 1,000 eV with both spacial and temporal uniform beam characteristics. This source permits the use of Commonwealth Scientific's OPTILINŽ self-aligning ion optics components. Electrically, the source 135 acts as the system anode and is the current (ion) source. The wafer and the electrostatic chuck perform the role of the cathode, and receive current from the anode to thereby achieve etching and planarization of the wafer surface.
In order to operate the ion beam source 135, there must be a gas supply subsystem (not shown) of the ion beam gas 156, and an ion source power supply subsystem (not shown). Certain other gases may be supplied from individual subsystems for a variety of purposes. For example, gases may be introduced into the vacuum chamber 110 for purposes of chamber cleaning, purging, chemical etching, and other purposes. Ion beam etching can use reactive or non-reactive (noble) gasses or mixtures of these. Ar, Kr, and/or He can be accelerated towards the substrate to induce physical sputter-etching (molecular sand blasting), to act as the pressure equivalent in CMP. The kinetic energy of the impinging species can be adjusted in 2 ways. Kinetic energy is proportional to the mass of the impinging species. In addition, kinetic energy is also proportional to the acceleration voltage squared. This roughly correlates with material removal rates, however, too much voltage (>1 KeV) may result in substrate damage. In this application, Ion beam voltage and RF pedestal power (bias) regulate the velocity of the incoming ionized noble gasses. Other gasses can be used to add a chemical component to the reaction. These include, for example, NF3, oxygen, and FreonŽ like C2F6 and CF4 can be used independently or mixed to adjust the chemical component of the etch. For example, for wafer cleaning, a 10 mTorr NF3 plasma (inductive only, no ion beam or pedestal bias) or a CF4:O2 (about 3:1 ratio) plasma can remove etch residues (20 to 50 sccm). Adding these chemicals to the sputter/planarization process in small amounts (less than 20 sccm) adds a chemical component to the etch. This chemical component makes the etch process more isotropic, however material removal rates will be increased substantially. Cleaning processes will likely be short in duration (less than 30 seconds).
In the embodiment. shown in FIG. 1, the apparatus includes an “endpoint detector” 190. The endpoint detector may be selected from a wide range of instruments useful for detecting either surface smoothness or surface planarization. A supplier of such instruments includes Verity Instruments of Carrollton, Tex. In a preferred embodiment, where the substrate S is a semiconductor wafer, the endpoint subsystem 190 is an optical system that monitors the condition, roughness, thickness, and other properties of the surface layer or film on the wafer during processing. Subsystem 190 may use reflectometric and/or ellipsometric optical techniques to monitor wafer surface conditions.
As an alternative, monitoring of the wafer surface may be conducted using absorption or transmission spectra of the gaseous planarization products within the vacuum chamber 110. During the polishing or planarization technique, specific chemical species that include substrate surface products are formed, and these may be monitored for a preselected criteria that defines the endpoint of the process. For example, when a surface layer has been removed, an underlying layer may be exposed to the ion beam and chemical species from this underlying layer would be detected, indicating that the covering layer had been removed.
Preferably, system control and user interface functions are provided by a graphical user interface and control subsystem 200. Subsystem 200 permits the user to input commands and responses to messages and other protocols from the system 100. The interface also presents system data (pressure readings, number of substrates, time, power measurements, etc.) in graphical and tabular formats, as required for a variety of other purposes. The control subsystem may be based on a conventional PC using Windows operating system, and using a custom designed software for interfacing with the users and directing the actions of the tool. Various robotic subsystems may be used to transport substrates to and from the vacuum chamber. Suitable robotic systems may be obtained from a variety of sources, for example, Yaskawa America, of Chandler, Ariz., and Brooks Automation of Santa Clara, Calif.
FIG. 2 is an example of a process flow chart of an embodiment of the invention. In a first step, a wafer is inserted into the vacuum chamber 1100. In the vacuum chamber, the wafer W is placed on an electrostatic chuck, in step 1200. The chamber is then backfilled with a selected plasma-forming gas, in step 1300. Preferably, the gas pressure within the chamber is in the range from about 0.1 to about 100 milliTorr, with the most preferred pressure in the range from about 1.0 to about 5.0 milliTorr. Once the backfilling gas stabilizes at the selected pressure, step 1400 is commenced, and power is supplied to the radio frequency antenna and the electrostatic chuck. The DC electrical bias of the chuck is preferably within the range from about −100 to about −2,000 volts, with respect to chamber ground or the chamber body. The chuck also preferably rotates at a rate within the range from about 5 to about 500 revolutions per minute. The radio frequency antenna generates ions at a density in the range of about 1010 to about 1012 ions per cubic centimeter, that suppresses the buildup of static electric charge on the wafer surface and reduces the possibility of device damage to the circuit features formed on the wafers, and the device, from such discharge.
In step 1600, the ion beam is used to etch the wafer surface, to remove or reduce micro irregularities. The ion beam milling system uses a radio frequency bias to accelerate ions produced by the ion beam source 135 into the wafer surface. This bias is established between the plasma generated by the radio frequency antenna 140, that surrounds an insulating cathode with an imbedded metal plate and functioning electrostatic chuck 120. Radio frequency energy accelerates the ions into the surface of the wafer W in a direction parallel to the current flow, and into the metal plate. RF induced field is directed into substrate at voltages of −800 to −1200 volts. RF current passes through the wafer, through the ESC, and into a large metal plate. This current flow is perpendicular to the wafer surface. The RF potential is an AC wave oscillating at the same frequency as the RF bias. the net RMS voltage of the wave relative to the reactor ground (body) will be about −700 to −1000 volts, which is often referred to as bias voltage in RIE etch systems.
This invention uses RF induced voltages over the wafer pedestal to assist in directing the incoming ions. Applying an RF signal to the cathode generates a potential relative to the reactor body (ground). This is due to the relatively faster motion of electrons in comparison with ions (charge balance across the “plasma sheath” must be maintained). In a vacuum electrons flow out quicker than ions come into the sheath and hit the substrate. This potential, and thickness of the sheath or “dark space” are a function of plasma density (the coil/inductive source provides this), system pressure, and pedestal RF input power. Increasing RF power to the wafer/pedestal/cathode results in higher voltages across the sheath in addition to more current flow. Voltage and current are coupled given a constant pressure/antenna power and range from 150 to 1400 volts (0.007 to 0.1 Amp/cm2) with e-field perpendicular to the pedestal surface (across sheath covering the cathode). Generally, after a threshold voltage is achieved (about 50-100 eV), silicon dioxide will etch at a rate linearly proportional to the RF current passing through the wafer. Increasing the ion concentration by increasing the plasma density (more inductive RF power) may improve removal rates by offering more ions to the sheath (also reduces sheath potential). The effect of ion density is secondary to that of the sheath current in regards to etch rates.
It is theorized, without being bound, that as ions bombard the surface of the substrate or wafer, triangular facets appear on the surface. This surface morphology evolves as a result of sputter yields. These yields have rates that are energy and impart “angle of incidence” dependent (see attached yield vs. plot) Material is removed faster by ion impact methods when a glancing angle is used. Material removal rate increases as the beam is rotated off of normal and placed at a glancing angle to the substrate. Extreme glancing angles result in less removal of material from the substrate measured relative to the substrate surface. This is the angle of impact dependence of material sputtering rate. High features, relative to the lower features of wafer topography, will also be subjected to more lateral ion bombardment at glancing beam angles.
The highest sputter yields are about 45 degrees from the incident direction of the ion beam 130. As the surface features of the wafer are faceted, the ion beam is restart and focused by a system of lenses. Magnetic or electric lenses, or the DC bias applied between the plasma and the wafer surface direct the ion beam to sputter the evolving facets and form other facets on the crystalline, or polycrystalline, surface morphology of the wafer. It is theorized that radio frequency plasma inhibits charge buildup on the wafer surface, due to the wafer's low impedance and ability to transmit a charge. As the etching and rastering of the ion beam on the wafer surface continues, the typical material removal rate is from about 2,000 to about 5,000 amstroms per minute. Spot size, beam current, and wafer rotation speed affect removal rate.
The antenna provides the ions for the pedestal in addition to preventing anything on the wafer from charging. Antenna powers of about 3 to 5 KW should produce an adequate concentration of ions for the process of wafer cleaning. Charge on the wafer or in the reactor is undesirable since this can damage devices and/or alter the ion current flow in the system. Ions will be extracted from the inductive plasma and fired directly into the wafer surface via the RF power supplied to the cathode/wafer. Rounded micro irregularities or bumps will become jagged and square features on devices take on a faceted look. This will take about 1 minute to achieve globally across the wafer and is generated by the ion impact angle dependence of sputtering. Additional ions, fired from the rastering ion gun placed above the rotating substrate (about 30 degrees above the substrate), will contact the substrate at a different angle than the ions extracted from the ICP plasma. These ions will hit the substrate at about a 45 degree angle, knocking off the faceted peaks without etching deeply into the substrate (etch rate on peak tips will be at least about 5× that of the low areas). By tuning the ion gun voltage and sheath potential, one steers the ion impact angle into the substrate. If the sheath potential is 200 volts, for example, and the ion gun potential is 200 volts (30 degrees, or 173 volts along the wafer, and 100 normal to wafer), and the sheath is 200 volts normal to the wafer, this results in an impact angle of (tan−1(400/173)) or 66 degrees relative to the wafer plane. Adjusting either gun voltage or sheath voltage will change the ion impact angle of the ions coming from the gun. It is expected that most of the time the gun will be operated at voltages lower than about 500 volts to provide better ion steering capabilities. Dropping RF power to the pedestal would drop both sheath ion current and steering voltage (constant ion beam voltage). Similarly, ion beam current can be reduced to slow down the off angle ion etch rate. Either could tune up/down feature etch rates, thus altering selectivity and improving planarization rates. Etch non-uniformity could be controlled by substrate rotation rates and the beam raster pattern across the wafer. Throughout the process, the DC electrostatic chuck/cathode holds the wafer in place with a almost 0 amp current and about 1000 volt DC potential relative to the reactor body. The wafer is cooled by the water filled cathode. Helium can be introduced and trapped behind the wafer at pressures up to 5 Torr to enhance cooling.
As explained above, the process of material removal continues and is monitored by the endpoint subsystem 190. In step 1650, when the process is finished, the system proceeds to step 1700. Thereafter, in step 1800, the radio frequency power is turned off, in step 1900 the gas flow is terminated, and the chamber is evacuated and purged with inert gas. A determination is made in step 1950 as to whether the wafer should be further cleaned, in a clean and rinsing operation. If so, the wafer is cleaned in step 1975. Through use of reactive plasma to dissolve residues. After cleaning, or if cleaning is not required, the wafer is removed from the vacuum chamber and is ready for further processing.
The ion beam milling process of the invention may be utilized for treatment of polycrystalline and crystalline films, such as silicon, polysilicon, metals, metal oxides, and a wide variety of other compositions.
FIGS. 3, 4 and 5 depict representational, not-to-scale cross-sectional views of a portion of a silicon wafer prior to, during, and after ion beam milling in accordance with an embodiment of the invention. Before milling, the wafer portion 10 shown in FIG. 3 has a first patterned layer 20, shown as a series of spaced apart walls on its upper surface. Such a layer may be formed in a shallow trench isolation process (STI), or may result from the deposition of a conductive or nonconductive material. To assist in endpoint detection, or other aspects of the planarization or integration scheme, a stopper layer 30 overlies the upper surfaces of patterned layer 20. Such a stopper layer typically may be formed of a nitride, diamond-like carbon, or other materials well known in semiconductor fabrication. Finally, a conformal uppermost layer 40, requiring planarization, is deposited to cover both layers 20 and 30. Such a layer may be laid down by techniques such as chemical vapor deposition, physical vapor deposition, ion sputtering, or other useful methods. Layer 40 is most typically conformally deposited, so that the upper surface of layer 40 is non-planar and irregular in topology. Thus, as shown, the surface 50 of layer 40 may include several low lying features 58 and raised features 56. In order to proceed with further fabrication steps, the surface 50 must be planarized.
During milling in accordance with an embodiment of the invention, the topology of surface 50 becomes highly faceted by the effects of ion beam rastering and wafer bias as shown in FIG. 4. The formation, orientation, sizes and other parameters of the facets are properties of the materials from which layer 40 is created. For example, a polysilicon layer 40 will form facets that represent crystallographic planes of the small silicon crystals of the layer. In such a layer, the orientation of the facet will be randomly distributed, and different crystallographic plane surfaces typically will have different etch sputter rates. Scanning the surface with the ion beam will permit planarization of the surface, as long as the ion beam includes a rastering, focusing, and variable incident properties.
Upon completion of ion beam milling in accordance with the invention, a surface as shown in FIG. 5 is created. Thus, upper surface 50 of layer 40 is substantially planarized, and the irregular microstructures 58 and 56 shown in FIG. 3 are substantially eliminated.
The foregoing description provides an enabling disclosure of the invention, which is not limited by the description, but only by the scope of the appended claims. All those other aspects of the invention, and the equivalence, that will become apparent when a person of skill in the art has read the foregoing, all within the scope of the invention and of the claims hereinbelow.
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|U.S. Classification||219/121.41, 257/E21.244, 219/121.35, 204/298.36, 438/697, 204/192.34, 216/67, 219/121.42, 250/492.21, 216/66, 257/E21.218, 438/712, 219/121.43|
|International Classification||H01L21/3065, C03C15/02, H01L21/3105|
|Cooperative Classification||H01L21/31053, H01L21/3065, H01J2237/316, C03C15/02|
|European Classification||C03C15/02, H01L21/3105B2, H01L21/3065|
|Feb 10, 2000||AS||Assignment|
Owner name: SPEEDFAM-IPEC CORPORATION, ARIZONA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:DYER, TIMOTHY S.;REEL/FRAME:010564/0304
Effective date: 20000121
|Mar 30, 2005||REMI||Maintenance fee reminder mailed|
|Sep 12, 2005||LAPS||Lapse for failure to pay maintenance fees|
|Nov 8, 2005||FP||Expired due to failure to pay maintenance fee|
Effective date: 20050911