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Radio Frequency Tags for Identifying Legitimate Drug Products Discussed by Tech Industry
When FDA reported in February that it would be feasible in 2007 for the pharmaceutical supply chain to use a reliable system for tracking and tracing products, the agency cited radio frequency identification (RFID) as "the most promising approach."
Coupling RFID with something known as the electronic product code (EPC) creates an electronic pedigree, said Shabbir Dahod, president of Cambridge, Massachusetts-based SupplyScape Corporation, a firm working on electronic documentation to keep counterfeit drugs out of the pharmaceutical supply chain.
Dahod and representatives of other companies using the 60-year-old technology discussed RFID applications in health care at Smart Healthcare USA, a conference held on June 10 and 11 in San Francisco, California.
Electronic pedigree. The electronic pedigree envisioned by Dahod's company starts at the manufacturing plant, where each finished pharmaceutical container would receive an RFID tag, essentially a portable memory device, with the product's unique EPC and the drug company's identity. A wholesaler that receives a shipment of the product would add the firm's identity to each tag, a process that does not require the tag to be in the line of sight of the "read writer." This step would be repeated by the second wholesaler that handles the product. Thus, each pharmacy that receives a container of the pharmaceutical would have a complete electronic record of the product's handlers since release from the manufacturing plant.
As yet, FDA has not formally proposed requiring that electronic pedigrees replace paper pedigrees, which can be incomplete and subject to forgery, as was the case in 2002 with a large supply of 2000-unit epoetin alfa vials whose labels were forged, too.
FDA instead expects the private sector to be the driving force behind the adoption of RFID tags.
According to Combating Counterfeit Drugs, a report issued February 18 by FDA, the agency foresees companies this year studying the feasibility of mass serialization, that is, assignment of the EPC to each pallet, case, and package of a pharmaceutical. In 2005, according to FDA's timeline, there will be mass serialization of some pallets, cases, and individual packages of pharmaceuticals likely to be counterfeited. Also, some manufacturers, large wholesalers, large chain drugstores, and hospitals will use RFID technology to track and trace pharmaceuticals. Use of the technology will spread throughout the supply chain in 2006. In 2007, there will be mass serialization of all pallets and cases and most packages of pharmaceuticals and use of RFID technology by all manufacturers, wholesalers, chain drugstores, hospitals, and most "small retailers."
"The FDA is very serious about this," Dahod said, referring to the agency's expectation that nearly the entire pharmaceutical supply chain will use RFID technology by the end of 2007.
A technology gaining momentum. RFID of items, animals, and people did not gain momentum until recently because it's a challenge "getting the physics right under the right economic conditions," said Shahram Moradpour, senior director of market development at Sun Microsystems Inc., based in Santa Clara, California. Specifically, certain radio frequencies do not transmit well through liquids and metals, he said.
Radio frequencies, by definition, are in the range of 300 Hz to 300 MHz, although the field of RFID typically uses tags and labels that respond to frequencies in the range of 125 kHz (dog identification tags) to 2.45 GHz (automatic toll-road billing), said Peter Harrop, chairman of conference host IDTechEx Ltd., based in England. "There will never be an ideal frequency" for all RFID tags, he predicted.
He also predicted that mandates from Wal-Mart Stores Inc., Target Stores, other retailers, and the U.S. military for suppliers to place RFID tags or labels on pallets and cases for inventory purposes will drive supply chains from third in worldwide use of the technology to first in 10 years.
Wal-Mart, for example, gave its top 100 suppliers a January 2005 deadline for placing RFID tags on cases and pallets destined for stores in the Dallas–Fort Worth, Texas, metropolitan area. As of April 30, the company touted receiving RFID-tagged pallets and cases from eight suppliers.
But the New York Times reported March 29 that a similar Wal-Mart initiative for manufacturers of Schedule II controlled substances had fallen short of the initial goal. Whereas the company had set a March 31 deadline for manufacturers to place RFID tags on bulk containers of C-II drugs destined for a Wal-Mart distribution center near corporate headquarters in Arkansas, a spokesman acknowledged to a Times reporter that few of the manufacturers had complied and that the target date had been moved back to June 30.
RF trend for individual items. When discussing tags and labels on individual items, conference attendees most often mentioned a radio frequency of 13.56 MHz.
Tags and labels operating at 13.56 MHz are designed to communicate only their unique identifier and other information required for obtaining that identifier, according to the initial set of standards from EPCglobal Inc., a joint venture of the Uniform Code Council and EAN International (formerly known as the European Article Numbering Association). These standards also include information on "anticollision," meaning that communications can occur nearly simultaneously with multiple tags and labels.
The read range for 13.56-MHz RFID tags and labels is reported by various sources to be less than 1 in up to 4 ft, depending on the antenna.


It has been reported that the cap of the former Governor of Ekiti state was removed at the Peoples Democratic Party Mega Rally in Ondo town yesterday. The rally was in preparation for the gubernatorial election this Saturday.
Osokomole as the Former Governor Of Ekiti State is fondly called is in longerhead with the executive Governor Of Oyo State Engineer Seyi Makinde and Chief Bode George, a highly honoured PDP stateman over the leadership of the party in Ekiti State. The thugs that perpetrated this act are alleged to be the faithfuls of Engineer Seyi Mankinde.
The tuzzle for the leadership Of the Peoples Democratic Party in the southwest and Ekiti state ensued according to report because Ayodele Fayose was alleged of wanting to be the leader of the PDP in the southwest region and Ekiti State Inclusive. Makinde and Senator Abiuodun Olujimi are not happy with this development because it is presumed that Senator Abiodun Olujimi, a sitting senator in the senate should be the anchor of the party in the state.
Fayose on the other hand reacst through his media aide Lere Olayinka that he wont stop saying the truth on the smooth running and acticvities of the party. Osokomole vowed never to take the incidence with levity as it will be duely reported to security agencies. ”That’s how late Chief Bola Ige’s cap was removed in Ile Ife, Osun State then and we all know what happened later,” Fayose said.
He said ‘’ As for me, I am unperturbed and I must say it clearly that those new comers to the PDP and their old allies, who won’t mind soiling the image of the party to achieve their aims will not be allowed to succeed,” he said.
The All Progressive Congress (APC) also had their rally in Akure at the same time the PDP rally was going on in Ondo town. Rotimi Akeredolu is the the gubernatorial candidate of the All Progressive Congress in Ondo State contesting against Eyitayo Jegede Of the Peoples Democratic Party.


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domain: hobby


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Louisville-Clemson | 3 keys and a prediction
Keys to victory for No. 4 Louisville (4-0, 2-0 ACC) when it visits No. 3 Clemson (4-0, 1-0) at 8:22 p.m. Saturday (ABC).
Prevent big plays
Clemson quarterback Deshaun Watson is one of the best deep-ball throwers in the country, and he has talented wide receivers, including Mike Williams, who didn't play against Louisville last year. In 2015, the Tigers averaged 4.5 completions of at least 20 yards per game, 2.3 completions of at least 30 yards and one completion of at least 40 years. So far this season, Clemson has kept up the pace on the 20-plus passes but has only four total completions of 30-plus yards and just one for 40-plus. The Cards need to keep the Tigers at bay and avoid huge, momentum-changing plays in a hostile environment. Getting pressure on Watson will help, and U of L, which has 15 sacks, has been successful in harassing QBs all year. Clemson's offense has seemed a little off this first month from the explosive standard it set to finish last year, but the Tigers are averaging the exact same points (33.5) as they did through four games last season. In the fifth game last year, Clemson scored 43 on Georgia Tech and never looked back.
MORE U OF L COVERAGE
- Big 12's pass a blessing in disguise
- U of L or Clemson? Media picks are in
- Jackson-Watson: ESPN's McShay breaks it down
- Did Clemson try to recruit Jackson?
- Clemson coach: U of L game like eating an elephant
Avoid negative-yard plays
The Louisville offensive line's vast improvement this year in limiting tackles for loss is one of the most surprising developments in the Cards' hot start. U of L was one of the nation's worst in allowing 7.5 negative-yard plays per game last season. In 2016, U of L is tied for second-best (1.8 per game and seven total in four games). The trend, helped no doubt by Lamar Jackson's elusiveness at quarterback, has led to Louisville avoiding long second- and third-down situations. Last year, Clemson was living in the Cards' backfield, sacking Kyle Bolin five times and making two other tackles for loss. The Tigers have probably the biggest, best defensive front U of L will face this season.
Have a quick start
Louisville has put so much pressure on its opponent by building early leads, and doing it again Saturday would diminish the impact of the Death Valley crowd. Having the lead also has allowed U of L's defense to stay aggressive and attack the quarterback. The Cards have outscored the opposition 77-10 in the first quarter this season, and last week's game at Marshall was the first time the Cards haven't scored on the first possession. They scored on the second and still within the first four minutes. If Louisville gets up, say, 14-0, what has it shown this season to suggest it would ever let a team come back?
Steve Jones' prediction
Louisville 38, Clemson 31: After predicting the Tigers to win in the preseason, I'm changing it up and doubting that there's any stopping Jackson and this Louisville offense, even by an elite defense like Clemson's. These teams have played low-scoring games the last two years, and I just can't see it happening again. U of L lost only 20-17 to Clemson last year when Lamar Jackson, James Quick, Jamari Staples, Cole Hikutini and three current starting offensive linemen didn't even play. If U of L lost by only three in 2015, what will be the outcome when the Cards add the most dangerous offensive player in the country who is averaging six touchdowns per game to the mix?

domain: news


Pby paramount IN GENERAL PROPERTY 2022-01-21
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You power your home with energy, but are you aware of electrical safety? Faulty and damaged wiring system usually is the main culprit behind electrical


- What is the best metal for exhaust?
- Does stainless steel exhaust increase power?
- Which is better titanium or stainless steel?
- Are Catback exhausts worth it?
- Which is better stainless steel or aluminum exhaust?
- How long will an aluminized exhaust last?
- Does straight pipe add horsepower?
- How much horsepower can 2.5 inch exhaust support?
- Does stainless steel exhaust sound better?
- What is 409 grade stainless steel?
- Will stainless steel last forever?
- What are the benefits of a stainless steel exhaust?
- Can I use aluminum for exhaust?
- Will stainless steel rust?
- Does stainless steel exhaust change color?
- What gauge steel is exhaust pipe?
- Why do exhausts rust so quickly?
- How long will a stainless steel exhaust last?
What is the best metal for exhaust?
stainless steelExhaust parts made from stainless steel have the best resistance to rust.
However, they will rust over time.
Stainless steel is the most expensive choice.
It is also more difficult to bend and weld..
Does stainless steel exhaust increase power?
Performance. Performance wise, stainless steel exhausts will drastically improve the performance of your car, too. … Thankfully, stainless steel exhausts cool down the gases and prevent this whole process. This is why the longevity of stainless steel exhausts is significantly longer than regular, carbon pipes.
Which is better titanium or stainless steel?
Titanium is approximately three to four times stronger than stainless steel, which means its lifespan over generations is slightly longer. However, titanium can scratch, so its care entails routine polishing, or it risks becoming dull and marred.
Are Catback exhausts worth it?
If the stock catalytic converters are fairly restrictive, then less power can be gained from a cat back exhaust system. If the stock cat’s can flow a large amount of exhaust gas with creating too much restriction, then a cat back exhaust system should offer a nice increase in power.
Which is better stainless steel or aluminum exhaust?
Compared with the stainless steel one the aluminium exhaust is lighter, cost-effective and highly workable. The stainless steel exhaust system on the other hand, is covered with chromium, nickel and manganese as to create corrosion resistance alloy.
How long will an aluminized exhaust last?
3-5 yearsIf you only take short trips, the exhaust never gets hot enough to evaporate all of that moisture. That moisture causes the inside of the system to rust. In a moderate climate, aluminized steel might last 3-5 years on a daily driver. In a dry climate, an aluminized exhaust system could last 8 years or more.
Does straight pipe add horsepower?
A straight pipe exhaust will reduce the amount of pressure that is put on an engine by exhaust gases, which will let an engine function better overall. You’ll see an increase in both horsepower and torque when you put a straight pipe exhaust into place.
How much horsepower can 2.5 inch exhaust support?
2.5″ is good to 450 flywheel hp according to Mustang 5.0, thats not to say that there would not be some restriction at this rating. Usually 400 rwhp is a good time to go to 3″, Some 302 motors will not handle 3″ exhaust on a N/A motor unless it has some really good stuff in it.
Does stainless steel exhaust sound better?
Mild steel manifolds (which absorb sound better than stainless steel) will not resonate the sound of each cylinder firing through it as much. Mild steel exhausts generally have a thicker wall. Stainless sounds more zingy due to the metal being thinner.
What is 409 grade stainless steel?
Grade 409 stainless steel is a Ferritic steel that offers good mechanical properties and high-temperature corrosion resistance. It is commonly considered as a chromium stainless steel, with applications in exhaust systems of automobiles and applications that demand weldability.
Will stainless steel last forever?
In fact, although stainless steel is an alloy that contains chromium and other elements offering a certain amount of resistance to corrosion the base material is virtually as active as ordinary carbon steel. … So good care should be taken of this oxide layer to ensure stainless steel will last a lifetime.
What are the benefits of a stainless steel exhaust?
Put simply, the benefits of a stainless steel exhaust are quality, performance and longevity. It’s better to buy stainless steel exhaust components, unlike mild steel components, because they won’t rust or corrode when they’re scratched or scarred.
Can I use aluminum for exhaust?
There are many positives to using an exhaust system crafted from T6061 aluminum where possible instead of a stainless steel variant. T6061 aluminum has high corrosion resistance due to its alloy makeup, which includes other elements like magnesium.
Will stainless steel rust?
Stainless steel remains stainless, or does not rust, because of the interaction between its alloying elements and the environment. Stainless steel contains iron, chromium, manganese, silicon, carbon and, in many cases, significant amounts of nickel and molybdenum.
Does stainless steel exhaust change color?
If you have chrome pipes you’ll often notice that they will turn blue or discolor. … Heat turns chrome blue, but if your exhaust pipe is made of stainless steel, the excessive heat will turn it golden color.
What gauge steel is exhaust pipe?
most headers are 18 gauge steel , most exhaust is 16 gauge or thicker , same material unless you got stainless headers or tails .
Why do exhausts rust so quickly?
The two main reasons are water and heat. Water vapour condenses in your exhaust when it cools. … Water is also constantly splashed on it when driving in the rain or on wet roads. But the reason it rusts faster than other exposed parts is due to heat.
How long will a stainless steel exhaust last?
8-10 yearsStainless steel is more likely to crack, due to this internal stress. Most modern factory exhaust systems are made from 409 stainless steel. It is strong and will last 8-10 years in a moderate climate.


text:
Vols football no longer building; now it's time to win
The middle of February is about as dead as it gets for college football. National Signing Day has come and gone, and spring practice is still a few weeks away.
What better time for a coach to kick back and decompress?
In today's high-salaried, hyper-competitive world of college coaching, this is a time for kicking it up a notch. There's a foundation to be laid for next season. It's a time for gaining an edge on the competition, even though you know the competition is just as devoted to gaining an edge on you.
So my guess is Tennessee coach Butch Jones and his staff aren't sleeping in. Even in the quietest moments, a new catchphrase could be conceived for Team 120.
As you probably have noticed, Jones is never short of catchphrases. Something else worth noticing: His motivational ploys seem to work.

domain: sports


|Publication number||US6458603 B1|
|Application number||US 09/974,938|
|Publication date||Oct 1, 2002|
|Filing date||Oct 10, 2001|
|Priority date||Oct 10, 2000|
|Also published as||DE10050076A1, DE10050076C2, US20020042158|
|Publication number||09974938, 974938, US 6458603 B1, US 6458603B1, US-B1-6458603, US6458603 B1, US6458603B1|
|Inventors||Alfred Kersch, Siegfried Schwarzl, Stefan Miethaner, Hermann Wendt|
|Original Assignee||Infineon Technologies Ag|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (18), Non-Patent Citations (5), Referenced by (13), Classifications (9), Legal Events (6)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The invention relates to a method for fabricating a micro-technical structure, in particular a ferromagnetic structure for use in a MRAM (Magneto-resistive Random Access Memory), wherein a mask is structured, the mask is arranged on a substrate and the micro-technical structure is generated on a surface region of the substrate which is not covered by the mask. The invention also relates to a micro-technical component having a substrate and a micro-technical structure arranged on the substrate.
Particularly in the case of microelectronic components, i.e. electronic components whose structure dimensions reach the micron range and even the sub-micron range, special, highly developed structuring processes are employed. Structures with particularly small dimensions are desired in particular for the development of data memories. However, structuring processes of this type are also employed for microstructures for other applications, such as for example write and/or read heads for hard disks.
It is known to use lithography processes and etching processes to structure thin layers and layer systems. In particular, in this case the lithography processes generate structures in photo resist layers, and etching processes transfer these structures into the thin layers or layer systems which lie below the photo resist layers. Anisotropic plasma etching processes, such as for example RIE (Reactive Ion Etching), RSE (Reactive Sputter Etching), ECR etching (Electron Cyclotron Resonance etching), ICP etching (Inductively Coupled Plasma etching) and CAIBE (Chemically Assisted Ion Beam Etching) are known for layer structuring in the micron (μm) and sub-micron (sub-μ) range. With etching processes of this type, it is necessary for the reaction products formed from the material which is to be etched away to pass into the gas phase so that they can be removed from the reaction chamber. Numerous materials which are suitable for microstructures in terms of their physical properties cannot be satisfactorily structured using some or all of the known etching processes, since the reaction products which are formed during the etching form a passivating layer on the surface of the material which is to be etched, thus preventing further etching and removal of the material. Furthermore, etching processes in general may lead to redeposition of the material which has been etched off, for example on etching masks, the edges of the regions which are to be etched and on parts of the etching chamber. This leads, for example, to undesirable inclined etching flanks and changes to the dimensions of etching masks. However, electrical short circuits caused by electrically conductive redeposition on the flanks of multilayer systems may also occur.
Particularly for use in future MRAMs (Magneto resistive Random Access Memories), structures with ferromagnetic materials, such as Ni, Fe and Co, as well as alloys comprising these materials, are produced and tested for suitability. When structuring these materials using etching processes, the nonvolatile passivating layers described above are formed. S. J. Pearton, et al., in the publication “High Rate Etching of Metals for Magneto Electronic Applications,” Electrochemical Society Proceedings Vol. 97-21, pages 270-85 (hereinafter “Pearton”) propose using a plasma etching process with a high ion density, in order to avoid the formation of a disruptive passivating layer. According to Pearton, the high ion density leads to a high ion flux, so that normally nonvolatile reaction products are sputtered away. Pearton proposes etching ferromagnetic metal alloys, such as NiFe and NiFeCo, in the presence of Cl in the etching gas. Although this leads to higher etching rates than with pure Ar etching gas, chlorine-containing compounds that are thereby formed lead to corrosion of the metal alloys after the etching. The chlorine-containing compounds have to be removed in a further process step.
It is reported in the publication “Assessment of Dry Etching Damage in Permalloy Thin Films” by S. D. Kim et al., Journal of Applied Physics, Vol. 85, No. 8, pages 5992-5994, dated Apr. 15, 1999, that plasma dry etching processes, such as IBE (Ion Beam Etching) and RIE (Reactive Ion Etching), in the case of NiFe (Permalloy), lead to the magnetic properties being impaired, on account of the bombardment with ions.
A further drawback of plasma etching techniques is the low selectivity of the etching action both with respect to the etching mask and with respect to the substrate on which the material to be etched is arranged. This leads to etching masks being worn away and to undesirable structuring of the substrate.
It is accordingly an object of the invention to provide a method of fabricating a micro-technical structure and a micro-technical component with a micro-technical structure formed on a substrate, which overcomes the above-mentioned disadvantages of the heretofore-known devices and methods of this general type and wherein the generation of the final lateral dimensions of the structure (structuring) effects and/or causes and/or has caused as far as possible no damage to the structure and the substrate. Particularly in the case of structures comprising ferromagnetic materials, the magnetic properties of these materials are not to be adversely affected by the structuring and subsequent process steps caused by the structuring.
With the foregoing and other objects in view there is provided, in accordance with the invention, a method of fabricating a micro-technical structure, in particular a ferromagnetic structure for an MRAM. The method comprises the following steps:
providing a substrate;
forming a structured shadow mask on the surface of the substrate, and defining on the surface an uncovered surface region not covered by the mask and a shadow region shadowed but not covered by the mask; and
depositing material through the mask in a directed deposition process and forming the micro-technical structure on the uncovered surface region of the substrate not covered by the mask.
With the above and other objects in view there is also provided a micro-technical component, comprising:
a substrate; and
a micro-technical structure formed on the substrate and extending along a common interface with the substrate, the micro-technical structure having been fabricated with the above-outlined method, and a shaping of a surface or at least one layer of the structure at an edge of the structure resulting only from a deposition of the structure material in the directed deposition process.
An important idea of the present invention is to arrange the material of the structure on the substrate in the same process step as at least part of the structuring of the structure which is to be fabricated. The structure is laterally delimited in at least one location of the substrate purely by the fact that the structure material is arranged on the substrate. This eliminates the need for a following etching process, which could cause damage to the structure and/or the substrate.
In one embodiment, a mask is structured and arranged on the substrate in such a manner that the mask shadows but does not cover a surface region of the substrate. In the direction of a surface normal, the mask is situated at a distance from the surface in this surface region. Then, material of the structure which is to be fabricated is deposited on the substrate in a directed deposition process. The term “directed deposition process” is understood as meaning a deposition process wherein the material which is to be deposited generally moves in a directed manner, namely in a straight line, toward the deposition location. This does not rule out the possibility of the direction of movement of the material which is to be deposited being changed, for example by the interaction of a plurality of particles of the material being deposited and/or deflection from structure edges and/or by scattering on fixed structures. However, most of the material which is to be deposited will move substantially in a straight line from a deposition source or a source region of the deposition to the deposition location.
A significant advantage of this embodiment consists in the fact that significantly less material is deposited on the shadowed surface region of the substrate than on uncovered and unshadowed surface regions of the substrate. Furthermore, even within the shadowed region the deposition rate is dependent on the distance between the deposition location and the edge of the shadowed region. Generally, the deposition rate will fall continuously at increasing distance from the edge of the shadowed region. The dimensioning of the mask and setting of the distance between the mask and the shadowed surface region of the substrate, as well as the nature and process management of the directed deposition process, therefore allows the local distribution of the thickness of the deposited material in the shadowed region to be controlled. It is therefore possible, for example, to produce a more or less steep flank of the deposited material at the edge of the shadowed region.
In a special embodiment of the invention, wherein, by deposition of a plurality of layers on top of one another on the substrate, the in this case multilayer micro-technical structure is generated, the control options referred to above can be utilized to good effect. For example, it is possible for a layer which is deposited at a later stage to completely cover a layer which was deposited at an earlier stage all the way over the edge of the layer which was deposited earlier. The layer deposited later is, for example, a tunnel barrier, a diffusion barrier and/or a separating layer which prevents the material of the layer deposited earlier from coming into contact with material of a layer which was deposited even later than the separating layer. In particular, a TMR (Tunnel Magneto resistance) element or a GMR (Giant Magneto resistance) element can be produced in this way. TMR and GMR elements can be used, for example, as memory elements for future MRAMs.
In particular, the layer which was applied later and the layer which was applied earlier are produced, in deposition processes, with a different angular distribution of the material which is to be deposited. In this context, the term angular distribution is understood as meaning the angular distribution of the material to be deposited from the viewpoint of a source of the deposition process or a source region of the deposition source. Sources of the deposition process may, for example, be a sputtering target, an electrically heatable evaporation source and/or the target of an electron beam evaporator. The angular distribution can be set in particular by ionization of the material to be deposited and by means of electrical fields. Pure PVD (Physical Vapor Deposition) processes have a more uniform angular distribution than PVD processes with ionized deposition material in the presence of electric field forces. In the case of electron processes, the flux of deposition particles in the direction of the electric field forces is greater.
The mask which shadows the surface region of the substrate may be structured before, during and/or after its application to the substrate. It is advantageously arranged and structured in such a manner that a first part of the mask covers a surface region of the substrate and a second part of the mask forms an overhang which is supported against the substrate by the first part and which defines the shadowed surface region. The length of the overhang is preferably adapted to the abovementioned factors of influence for controlling the deposition of the structure material in such a manner that the edge of the structure generated does not abut the mask. In this case, in a following method step, filler material may be arranged between the mask and the edge, serving, for example, as electrical insulation or a diffusion barrier.
In accordance with a particularly preferred feature of the invention, when arranging the mask on the substrate initially a first mask layer is deposited on the substrate. Then, a second mask layer is deposited on the first mask layer. Therefore, in the region wherein the micro-technical structure is subsequently to be generated, the substrate is covered by two mask layers which lie on top of one another. To structure the mask, the second mask layer and the first mask layer are removed again in defined regions. The result is a surface region of the substrate which is neither covered nor shadowed and is therefore available for the deposition of the structure material. The first and second mask layers preferably comprise different materials. The process for removal of the first and second mask layers may be a single-stage or multistage process. Then, in an isotropic etching process, additional material of the first mask layer is removed between the second mask layer and the substrate. This results in the overhang which is formed by the second mask layer.
Often, there is a need for micro-technical structures which are intended to have a continuous encircling edge with a defined local arrangement. By way of example, microelectronic structures at a defined location are deposited directly on a material which is used for electrical connection to the microelectronic structure. If the structure is not arranged at precisely the correct position, the electrical contact is insufficient and short circuits may occur at a later stage. The above-described arrangement and structuring of the mask offers a reliable solution to this problem. The first and second mask layers can be opened up at precisely the correct location, for example by lithographic methods. The edges of the regions which have been opened up in this way substantially also define the edges of the structure which is subsequently to be fabricated. In particular, the shadowed surface region forms a continuous encircling edge around an unshadowed surface region of the substrate, which is to be provided with the micro-technical structure.
In order, for example, to electrically insulate the micro-technical structure and/or mechanically stabilize the structure, the shadowed surface region of the substrate and/or the surface of the micro-technical structure is preferably covered with a filler material after the micro-technical structure has been generated. Particularly with the above-described type of arrangement and structuring of the mask, it is possible for the entire region which has been opened up in the first and second mask layers to be filled with the filler material. A planar surface is then formed by removing part of the mask and part of the filler material. The planar surface then, for example, allows the deposition of further planar layers and therefore allows the generation of further structure elements in a manner known per se.
The micro-technical component according to the invention is wherein the structure, which extends along the common interface with the substrate, has been fabricated using the method according to the invention, and the shaping of the structure surface or of at least one layer of the structure at the edge of the structure is exclusively the result of the deposition of the structure material in the directed deposition process. Therefore, the surface of the edge of the structure or of the layer has no traces whatsoever of a subsequent structuring measure carried out after the end of the deposition of the structure material. In particular, it has no residues of chemicals and/or ions which are used in an etching process, and, as is typical for a deposition process, the surface profile is slightly irregular, i.e. the surface has the typical roughness. This can be established by X-ray structural analysis tests in a corresponding way to that described in the abovementioned publication by S. D. Kim et al.
Particularly if the micro-technical structure has been fabricated with a sufficiently long overhang of the shadow mask, the structure at its edge has a characteristic S-shaped surface. In this area, the thickness of the structure increases in an S-shape from approximately 0 to a mean value for the structure.
The structure is preferably enclosed by an adjoining filler material which is applied to the substrate.
A significant advantage of the invention is that there is no need for complex plasma etching processes to structure the micro-technical structure. To structure the shadow mask it is possible, for example, to use much simpler etching installations with proven etching processes which are used for damascene processes. Particularly in the case of microelectronic structures, these installations are already in use for fabrication of the electrical connection lines. On account of the in-situ structuring of the structure by targeted, locally restricted deposition of the structure material, damage to the structure and/or the substrate caused by structuring etching processes is avoided.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a method for fabricating a micro-technical structure, and micro-technical component, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
FIGS. 1-7 are diagrammatic side views illustrating various stages in the fabrication of a micro-technical structure;
FIG. 8 is a section through an exemplary construction of a micro-technical structure;
FIG. 9 is a section through an exemplary construction of a micro-technical structure;
FIG. 10 is a diagram showing simulation results representing a cross-sectional profile of a micro-technical structure at its edge; and
FIGS. 11A-11C are diagrammatic sections showing various stages of the integration of a TMR element in an MRAM memory component.
Referring now to the figures of the drawing in detail and first, particularly, to FIG. 1 thereof, there is shown a cross section through a substrate S with layers arranged thereon. For the sake of simplicity, in the text which follows the terms “top” and “bottom” refer to the illustration which has been selected in FIGS. 1 to 11, without this being intended to restrict the implementation of the invention. The substrate S may, for example, be a CMOS, bipolar, BiCMOS or GaAs semiconductor circuit, including metallization structures. A first dielectric layer D1 comprising a first dielectric material is deposited on the substrate S. A second dielectric layer D2 made from a second dielectric material, which is different from the first dielectric material, is then deposited on the layer D1. A lithographically produced mask LM is in turn arranged on the layer D2. The mask LM has a hole-like aperture O which passes all the way through the mask layer.
Starting from the structure illustrated in FIG. 1, in a following process step the opening O is transferred, with dimensions which are as closely accurate as possible, into the layer D2 using an anisotropic etching process, i.e. a continuous opening with, as far as possible, the same opening which is produced in layer D2. Then, in an isotropic etching process, the material of the layer D1 is etched, so that an opening with a greater width than the width of the opening in the layer D2 is formed in the layer D1. The isotropic etching process is a selective etching process wherein the material of the layer D2 and that of the substrate S are etched at most slightly. Then, the mask LM is removed. The resulting structure is illustrated in FIG. 2.
The layers D1, D2 which have been structured in this way form a shadow mask SM, the material of the layer D2, at the opening, forming a continuous, encircling overhang U; the length of the overhang U is equal to the difference between the radii of the circular openings in the layers D1, D2. Alternatively, the openings may also be rectangular or of some other shape.
By directed deposition, e.g. by sputtering of the material to be deposited or by direct vaporization of the material to be deposited, a structure element SE is deposited on the surface of the substrate S (FIG. 3). Because part of the surface of the substrate S is shadowed by the overhang U, and because of the directionality of the deposition process, a flank or an edge R of the structure element SE is formed at the edge of the shadowed surface region. Since material is also deposited on the layer D2 during the deposition process, thereby reducing the width of the opening in layer D2, and since the layer thickness of the structure element SE increases continuously, the edge R does not run perpendicular to the surface of the substrate S. Unlike with known structuring processes using etching techniques, wherein flanks of this type are generally undesirable, since, for example, they make it more difficult to laterally electrically insulate the structure, the shape of the edge R is not in this case a drawback. If insulation is actually required, sufficient space remains between the edge R and the material of the layer D1 to achieve good insulation. Furthermore, as will be explained in more detail, the inclined profile of the edge R may be an advantage if a further, thin layer is to be deposited on the structure element SE.
As shown in FIG. 10, the edge R, in cross section, is not rectilinear. FIG. 10 shows the result of a simulation of the deposition of a structure element which is composed of three layers. FIG. 10 illustrates part of the opening shown in FIG. in layers D1, D2. The measurement unit of the values plotted on the horizontal and vertical axes is, for example, μm (micron). The lower and upper layers of the structure elements consist of Ta and the interlayer consists of Al. FIG. 10 clearly shows the typical S-shaped cross-sectional profile of the edge R. Starting from a mean thickness for the thickness of the structure element, as is present, for example, at value 0.1 on the horizontal axis, the thickness initially decreases progressively, i.e. more quickly than in linear fashion, toward the edge, and then, after a reversal point has been reached, decreases digressively, i.e. more slowly than in linear fashion, toward the edge. The deposition AB (FIG. 3 and FIG. 10) leads to a reduction in the width of the opening in the layer D2 and therefore influences the shaping of the edge R. It can clearly be seen from FIG. 10 that the upper layer made from Ta scarcely has any material left at the far end of the edge R, on account of the closing gap between the structure element and the layer D2.
After the structure element SE has been fabricated, the opening in the layers D1, D2 is completely filled up with a filler material, so that a filler layer FS is formed. This takes place, for example, by means of a CVD (Chemical Vapor Deposition) process, wherein Sio2 or Si3N4 is deposited as filler material. Further options are to deposit spin-on glass or polyimide or to use other known filling processes. It is not necessary for the opening in the layers D1, D2 to be filled up without any voids. Preferably, however, the structure element SE is completely covered by the filler material. Preferably, after the structure illustrated in FIG. 4 has been achieved, the material of the filler layer FS and of the shadow mask SM is removed until regions wherein cavities could be present have been completely removed from the overall structure. This is done, for example, by CMP (Chemical Mechanical Polishing), until the material of the layer D2 has been completely removed (FIG. 5). Etching processes, such as plasma etching and wet-chemical etching, may also be used. The fact that the structure element SE is completely covered protects it from damage during this process and any further process steps. If, after partial removal of the filler material and of the material of the shadow mask SM, the opening in the shadow mask SM or in the layers D1, D2 is not yet sufficiently filled, this filling step can then be repeated under simplified conditions. The filling operation is made easier since the aspect ratio of the opening (ratio of the opening depth to the opening width) is considerably reduced. Advantageously, the material of the layer D2 and the filling layer FS down to below the level of the lower edge of the layer D2 is removed first, before renewed application of filler material is commenced.
Particularly if the structure element SE is to be exposed on its surface, for example in order to make electrical contact therewith, further material of the shadow mask SM (the layer D1) and of the filler layer FS can be removed by CMP, until the surface of the structure element SE is exposed (FIG. 6). Alternatively, the surface of the structure element SE is exposed by means of a lithographic process and subsequent etching of a hole. The etching takes place, for example, by RIE (Reactive Ion Etching). The resulting structure is illustrated in FIG. 7.
FIG. 8 and FIG. 9 show different variants of the form of a structure element SE, as has been fabricated, for example, in the process steps shown in FIG. 1 to FIG. 7.
The structure element SE illustrated in FIG. 8 has a base layer GS with a substantially planar surface and a covering layer DS, likewise with a substantially planar surface. In this exemplary embodiment, the covering layer DS does not cover or does not completely cover the edge of the base layer GS. This structure can easily be achieved through the fact that the covering layer DS and the base layer GS can be applied in deposition processes with increasing directionality, or with increasingly marked nonuniform angular distribution. In this way, the material of the covering layer DS no longer reaches the edge region of the base layer GS.
The form of the structure element SE shown in FIG. 9 differs from that shown in FIG. 8 in that an additional interlayer ZS has been applied between the base layer GS and the covering layer DS. The interlayer ZS was applied in a deposition process with lower directionality or more uniform angular distribution, so that the edges of the base layer GS are completely covered by the material of the interlayer ZS. In this way it is possible, for example, to fabricate TMR or GMR elements for use in MRAM components. In TMR elements, the base layer (for example the hard magnetic layer) consists, for example of NiFeCo, the interlayer consists, for example, of Al2O3, and the covering layer DS consists, for example, of NiFe (for example the soft magnetic layer).
The manufacturing processes which have been described with reference to FIG. 1 to FIG. 7 are carried out, for example, as follows: the covering layer D1 is fabricated with a layer thickness of 50 nm using a PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The material is, for example, Si3N4. The layer D2 consists, for example, of SiO2, which has been applied with a layer thickness of 200 nm, likewise using a PECVD process. During the photolithography for generating the mask LM, holes with a width of approx. 350 nm were structured. The structuring of the layer D2 took place using an anisotropic RIE (Reactive Ion Etching) process with CHF3, CF4 and Ar etching gas. The isotropic etching of the layer D1 was effected by RIE, plasma etching and/or by CDE (Chemical Dry Etching). Suitable etching gases are CF4 with O2, SF6 and NF3. Alternatively, the hole may be made in the layer D1 by wet-chemical means in the presence of H3PO4 and at temperatures of 160 to 180° C.
The structure element SE is, for example, a TMR element which has been fabricated in the form explained with reference to FIG. 9 by adapting the directionality of the deposition process. The pressure and the basic nature of the deposition process were adapted accordingly. In a sputtering process, the target-substrate distance and the electrical voltage of the high frequency of a sputtering installation were changed. As has already been described, the degree of ionization of the gas in the process chamber is available as a further parameter (IMP process, as distinct from the standard PVD process). During the removal of the layer D1 outside the cell array ZF (FIG. 11a), an RIE process in the presence of CF4 with Ar or SF6 with He was used. The lithography step required for this purpose is not critical with regard to resolution and overlay adjustment accuracy. The layer D3 (FIG. 11) was deposited using a PECVD process with a layer thickness of 50 nm from the material Si3N4. The layer D4 was likewise deposited in a PECVD process with a layer thickness of 400-600 nm as SiO2. The structuring of the upper conductor tracks Lo (FIG. 11) in the cell array ZF and for the vias in the periphery P was achieved using a damascene process, i.e. by photolithography, RIE of the SiO2 layer D4 selectively with respect to the layer D3 in the presence of CHF3 and CF4 and Ar, by RIE of the layer D3 selectively with respect to the uppermost layer material of the structure element and selectively with respect to the material of the filler layer FS in the presence of CF4 and Ar, by deposition of a TaN/Ta double layer with a total thickness of 15 nm as diffusion barrier DB in a sputtering process, and by deposition of Cu with a thickness of at least 200 nm by sputtering. Finally, the planar surface illustrated in FIG. 11C was achieved using a CMP process, by removing the Cu and the TaN or Ta selectively with respect to the SiO2 of the layer D4.
FIGS. 11A to 11C show cross sections through part of a cell array ZF with adjoining periphery region. By way of example, only one TMR cell of the cell array ZF is illustrated, namely the structure element SE which has been fabricated, for example, using a method as has been described with reference to FIG. 1 to FIG. 9. The cell array ZF is a field of memory cells, as in the structure element SE for a MRAM.
After the construction illustrated in FIG. 9 has been reached, firstly the layer D1 is removed in the region of the periphery P. Then, a third dielectric layer D3 is applied to the planar surface (in the cell array ZF) formed by the layer D1, the filler layer FS and the structure element SE or to the already existing lower conductor track Lu for making electrical contact with the cell array or a part of the cell array. The lower conductor track Lu is already embedded in a diffusion barrier DB which, in turn, is delimited at the bottom by the actual substrate S of the construction. Around the lower conductor track Lu, the diffusion barrier DB is laterally delimited by a dielectric material. Furthermore, the lower conductor track Lu may also be delimited on its upper side by a diffusion barrier (not shown), which in this case is situated between the lower conductor track Lu and the structure element SE. A fourth dielectric layer D4 is then applied to the third dielectric layer D3. The result is the overall construction shown in FIG. 11A.
Then, upper conductor tracks Lo (in the cell array ZF) or vias V (in the periphery P) are fabricated using the damascene technique (inlay technique). For this purpose, first of all holes or trenches are produced through the layers D3, D4 to the structure elements SE or to the lower conductor track Lu using a lithography process with subsequent etching (FIG. 11B). Then, firstly a diffusion barrier DB is introduced into the holes which have been generated, so that it completely covers the edge of the holes. The diffusion barrier DB is used in particular to prevent diffusion of the material of the conductor tracks Lo, V (for example Cu) which is yet to be introduced. Then, the elongate contact holes are filled with electrically conductive material. The final step is the planarization of the surface. This state is illustrated in FIG. 11C.
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|Aug 13, 2002||AS||Assignment|
Owner name: INFINEON TECHNOLOGIES AG, DELAWARE
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KERSCH, ALFRED;SCHWARZL, SIEGFRIED;MIETHANER, STEFAN;ANDOTHERS;REEL/FRAME:013179/0966;SIGNING DATES FROM 20011012 TO 20011114
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Owner name: QIMONDA AG, GERMANY
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|Nov 23, 2010||FP||Expired due to failure to pay maintenance fee|
Effective date: 20101001


Karnataka is all set to get a new government. While Siddaramaiah and D K Shivakumar will be sworn in as Chief Minister and deputy CM respectively, there would be eight others who will take oath as cabinet ministers.
The list o 8 cabinet ministers was released by K C Venugopal, Congress MP and general secretary of the party.
There would also not be another deputy CM and Shivakumar would be the only one. There have been demands by the Lingayat and Muslim communities to have a candidate of theirs’ as deputy CM. However, the high command made it clear that the top billings would go to only Siddaramaiah and Shivakumar as of now.
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text:
Glad you found me…maybe we can make sense of this journey called life through gardening, blogging, preserving and creating art for the garden.
It is 22 months post-stem-cell transplant, and I decided to take my gardening know-how and start off doing things right this time. Being a budget conscious individual, this philosophy is perfect for the garden. But this year, I decided to take an easier route and started off with purchasing raised cedar beds from Greene’s Fence. In fact, I bought, rather than made, 4 raised beds because the cost of hiring someone to build was exorbitant. These raised beds are soooo easy to assemble…no tools needed. You just slide the boards in the corner posts, and voila, you have a raised bed! It took me 15 minutes to assemble each one. Oh, you do need a screwdriver to attach the caps onto the post, but it was so easy. The nice thing about Greene’s is, you can build to your own specifications.
The first is the 2’x8’x10.5″ cedar bed, and the 2nd is 2’x4’x10.5″ You can add on to these if you wish. I planted my seedlings a month ago. To these raised beds, I added garden soil purchased from my local home improvement store. Georgia soil is clay, and of course, nothing grows in this type of soil.
Since this bed is for heirloom tomatoes, I hired someone to pound in 10 feet rebars every 2 tomato plants as the infrastructure to support the plants as they grew. Then, natural twine is used to provide the horizontal support. So as the plants grow, the stalk and leaves are tucked in between the twine…works perfectly, and is an inexpensive solution to some of the expensive tomato cages on the market.

domain: agronomy


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Amid continued budget issues, State Superintendent Joy Hofmeister announced earlier this week that the education department would not be allocating the $50,000 needed to hold this year's Oklahoma State Science and Engineering Fair.
Hofmeister explained to KFOR: “It was due to the budget cuts we had last year. There was a loss of $38 million to that fund and that line item really required deep cuts and decisions.”
However, according to a press release from State Rep. Pat Ownbey (R-Ardmore), it looks like the private sector has rescued the science fair.
Previous Post: Reset of a Reset

domain: finance


Merry Christmas Everyone Shakin' Stevens Download 'Merry Christmas Everyone' on iTunes
7 January 2014, 12:00
Andrew Garfield returns as your friendly neighbourhood Spider-Man on April 18. Watch the trailer here.
Emma Stone reprises her role as Gwen Stacy while Jamie Foxx plays bad-guy Electro.
'The Amazing Spider-Man 2' promises to be one of the blockbusters of the year.
Watch the trailer above.


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The social network
Campbell Highlights & Essential Things To Do
Discover Your Local Campbell Area
AroundYou will help you discover local businesses, events and things to do in and around Campbell, within North Canberra. AroundYou supports the local community in Campbell by making it easy to discover fun community events, activities & things to do as well as the best Campbell businesses, as determined by other Campbell locals.


Waterjet and wet abrasive blast cleaning methods
Waterjet and wet abrasive blast cleaning are recognized methods for removing coatings and other contaminants to prepare existing coated structures for protective coating application.
These methods have evolved over the years to meet various challenges and service environments in the field. As the techniques and equipment have matured, so have the applicable standards and training surrounding them, which are explained in greater details below.
Wet abrasive blasting: A dual-component approach
Wet abrasive blast cleaning (WAB) is a generic description of systems that clean, prepare, or cut surfaces by delivering water, compressed air, and abrasive material. In some systems, water and air are the primary actors with abrasives added in. In others, abrasives and air are the primary actors with water added in.
WAB systems go by many names, including water-shroud blasting, wet-head blasting, water blasting, vapor blasting, and slurry blasting. Their main differentiator from dry abrasive blasting is that significantly less dust is created. Instead, the added water binds to fine particles and weighs them down, preventing their dispersion. That makes these systems viable when working in close quarters, when ventilation is poor, or when removing coatings that contain toxic materials.
Surfaces should be power washed following WAB cleaning to clear them of any leftover abrasive materials. Protective coatings bond best to clean surfaces. This is especially important for metal surfaces because, in addition to poor adhesion, leftover materials contribute to flash rust formation.
To ensure quality, consult the following SSPC/NACE WAB surface cleanliness standards for carbon steel surfaces:
- SP 5 – White Metal Wet Blast Cleaning
- SP 10 – Near White Metal Wet Blast Cleaning
- SP 6 – Commercial Wet Blast Cleaning
- SP 7 – Brush-off Wet Blast Cleaning
- SP 14 – Industrial Wet Blast Cleaning
AMPP is home to various SSPC reports that address procedures, equipment, materials, and safety concerns pertaining to WAB systems.
Waterjet cleaning: It’s just water
Waterjet cleaning (WJ) systems only use water in conjunction with compressed air. They’re commonly used in maintenance or refurbishment settings to remove coatings, rust, or other materials, exposing the original substrate.
Recommended waterjet cleaning methods vary depending on the surface cleanliness specified. SSPC/NACE’s surface cleanliness standards for metal surfaces are:
- WJ-1 - Waterjetting to Bare Substrate.
- WJ-2 - Very Thorough Waterjetting.
- WJ-3 - Thorough Waterjetting.
- WJ-4 - Light Waterjetting.
Waterjet cleaning methods range in intensity, from relatively tame water cleaning to ultra-high pressure waterjetting. Here’s a rundown:
- Water cleaning (WC) uses water under very little pressure to rinse unwanted matter from a surface.
- Low-pressure water cleaning (LP WC) is carried out at pressures below 5,000 psig. Also called “pressure washing” or “power washing,” this method is used to remove loose materials like laitance, dirt, scale, or light marine growth from a surface.
- High-pressure water cleaning (HP WC) features pressures between 5,000 and 10,000 psig. The method is suited for clearing pipe or removing weak concrete, marine growth, sandstone, mudstone, loose scale, loose rust, paint, and product accumulation on floors at lower pressures. At higher pressures, HP WC can remove concrete in piping, severe marine fouling, rubber on runways, lime scale, burned oil deposits, petrochemicals, stains, vegetation, tar, cement, and asphalt on vehicles or pipe. It can also restore building facades and expose aggregate.
- Waterjetting (WJ) features surface preparation water delivered to a surface at pressures greater than 10,000 psig ahead of an inspection or coating application.
- High-pressure waterjetting (HP WJ) is carried out at pressures up to 30,000 psig and is suited for paint or mill scale removal, removal of burned deposits and for cutting concrete.
- Ultra-high pressure waterjetting (UHP WJ) is performed at pressures greater than 30,000 psig. It’s used mainly to remove non-skid coatings from ship flight decks but can also remove paint and mill scale. In addition, it can scour a surface ahead of dry abrasive blasting.
It’s important to note that although waterjetting can effectively clean a steel surface, it will not create a surface profile or anchor pattern that is essential for good coating adhesion. However, by removing existing coatings and contaminants, the existing surface profile will be exposed.
Flash rust considerations
Any time WAB or WJ cleaning is performed, flash rust may develop as non-stainless-steel surfaces dry. Flash rust can be classified into three levels:
- Light flash rust is characterized as small amounts of rust in a thin layer through which the underlying substrate is visible. It cannot be easily removed when a cloth is wiped over the surface.
- Moderate flash rust obscures the steel surface when viewed without magnification. It is well-adherent but will leave marks on a cloth wiped over the surface.
- Heavy flash rust completely hides the surface from view. It’s loosely adherent and leaves significant markings on a cloth wiped over the surface.
To learn more about how to test for flash rust, consult the National Shipbuilding Research Program’s flash rust field assessment guidelines.


Amazon has the Sony GPS-CS3KA GPS Digital Imaging Accessory for $108.89 + free shipping = $108.89 shipped! Sync this little sucker to a with any camera and it will geo-tag your photos. It features a 15 hour battery life and an SD card slot.
Grew up back East, got sick of the cold and headed West. Since I was small I have been pushing buttons - both electronic and human. With an insatiable need for tech I thought "why not start a blog focusing on technology, and use my dislikes and likes to post on gadgets."


Remote control 700SS sidemount "sailboat"
• Dual action (throttle and shift in one lever)
• Heavy duty lever in black polyester powder coated finish
• Flush mount design
• Neutral safety switch option (prevents starting in gear)
• Standard control suits 33C type cables
• Neutral “warm up” button for throttle only operation
The references that are listed here are trademarks that apply to the respective trademark owners. The references are used only for a reference purpose. Our product is compatible with these reference numbers. Please note that our product is an aftermarket product (non-OEM), unless otherwise stated.


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Beautiful. Majestic. Elegant. Graceful. These are a few words which describe the idea behind the album Radiance. The songs are dedicated to display the emotions of beholding something radiant. Radiance is my third solo piano album and there are a total of 12 tracks on this album. This album was released in July 2014. I've uploaded four tracks from the album for free download.
Thank you for being a part of this wonderful journey!
NoiseTrade is a user-generated platform where fans can trade their email addresses for free music and books. All content is provided by users and does not indicate an endorsement from the Paste editorial staff. Create an artist or author account from a desktop or laptop to upload your own content and connect to new fans today.

domain: artistic


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Be smart! You have to use the technology in smart way to win this game, it will make easier to reach to the target.
Welcome to the imaginary war between Russian army & NATO. Prepare yourself before the game start else you will not even get time to relax once you enter in this adventurous FPS game.
As usual Gran is Angry, you need to help her to run on middles of the road. Because She is angry, so she loosed the concentration here. Avoid peoples, cars and obstacles by jumping and moving.
By the way this is one of the famous hit on mobile gaming.
A fully packed action game made by Juice Tin. Hope you will like utilize the weapons bravely to kill your enemies.
The whole environment created this game is tremendous. It gives a feeling as Ninja is going for a real fight. Play as the mysterious heroine, Crimson Ninja, and traverse the treacherous tower where few enter and none survive.
They are in huge numbers and it is not easy to guess when they stop to come. We are unable to let you know exact how many zombies will enter in this game. The alternate option to win here is just kill them by different numbers of weapons that you got.
Your name is Max and you have come to past to save the planet from Muck Menace. Fight and kill them all in this adventurous unity 3d war game.
Ride your won Chevrolet here in this unity 3d game. Accelerate it whenever required to win the game.
Save the girl from dark night as like heroes does in movie. There are bloods all around here but one can not expect more in such bad circumstances.
If you already played baseball then it is going to be easier to win here else you have to practice more. Keep your eye on the small white ball and hit it at right time and right place.
Making stratetgy is difficult but making strategy and fulfilling the same is even more difficult. Here you need to do the second one. You have not only play the games but have to play with your plans and ideas. Try to plan according to the demand. Unnecessary plans may harm and less ideas do the same.
Lets enjoy here if you find fun in making strategy.

domain: game


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Which sort of has my stomach in knots.
This specific story came at me from out of no where. Unlike almost all my other writing projects (of which there are many – all at varying degrees of completion, and all waiting for this story to get out the way so I can move back to them) this isn’t one that I dreamed of for a protracted period of time. When I sat down and started writing I really didn’t know all that much about my characters. I didn’t know their histories, their secrets and desires, or their dreams, and I had absolutely no idea what these characters were going to tell me.
And the result is something completely different from anything I’ve written before. I’ve always written with some shade of paranormal, magical or mystical basis to the story line. Some of what I’ve written before uses mythology as a springboard for the plot. This story has no magic. No myth. There’s nothing paranormal, mystical or fantastical about it.
Instead, this story is a contemporary romance.
It’s about second chances, and love and family.
It’s about doing the right thing for all the right reasons, no matter how hard that may be, and then living with consequences – no matter how wrong that may feel. It’s about forgiveness. Not just forgiving others but learning how to forgive yourself too.
All of which boils down to me being nervous of the outcome, the final product.
But you know, as nervous as I am… I’m pretty excited too.


Behind the Mic – My Cherie
Written by Kit Densley on March 27, 2020
Welcome to Behind the Mic with Kylie Brice! This week Kylie launches her new dynamic segment on the Takeover.
You can expect to hear some of the newest sounds in Adelaide as Kylie goes behind the mic to bring you the best in local and upcoming music talent.
‘Behind the Mic’ is all about putting the spotlight on local, original music, and helping connect the 1079 Life community with the Adelaide music community,’ says Kylie.
This week Behind the Mic will feature multi-instrumentalist and solo artist, My Chérie. Her music is described as “a dense mixture of etheral, jazz inspired guitar, live looping, atmospheric synth and hip-hop groove underneath pure, angelic vocals”.
Her debut EP launched February 2020 to great acclaim. You can check her out here or be listening Monday 30th March to hear her chat with Kylie.


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Aug 26, 2013
“To be creative means to consider the whole process of life as a process of birth, and not to take any stage of life as a final stage.” Eric Fromm
For social psychologist and psychoanalyst Erich Fromm, creativity wasn’t necessarily about bringing something — a poem, a symphony, a sculpture — into being. For him, creativity was an attitude. Creativity was the ability first to be aware, and then to respond. In this sense, creativity may produce works of art that can be viewed in a gallery, but it is also a way of living. Creativity may produce not only art but a life lived with awareness, a life imbued with meaning, a life lived well. Creativity is about allowing life to come into being — fully.
When I sat down to write this post just a few minutes ago, I looked at …
Mar 11, 2013
Last night I sat without a timer, or rather using a stick of incense to time my sit. Recently I bought some rather lovely Shoyeido Nokiba (Moss Garden) incense, which has long sticks that burn for 50 minutes. It’s a nice alternative to using my iPad as a timer. Sometimes it’s nice not to have electronics between me and my little altar.
The Boys in the Basement offered up some interesting experiences. The “Boys in the Basement” is a term I borrowed from the novelist Stephen King. He uses it to refer to the creative powers of the mind. I write quite a lot, and the term resonated …
Nov 07, 2012
I just stumbled across a lovely column by author Pico Iyer in the New York Times on “The Joy of Quiet.”
He discusses how overwhelmed we are:
In barely one generation we’ve moved from exulting in the time-saving devices that have so expanded our lives to trying to get away from them — often in order to make more time. The more ways we have to connect, the more many of us seem desperate to unplug.
I tend to think of us — well, most of us, anyway — as being a bit like early 20th century rubes from the sticks who have just arrived on Times …
Jan 30, 2012
Joe, a student in my online class, was worried that meditation would hurt his career. He works in a very competitive business where everyone is single-mindedly pushing and driving hard all the time. The whole idea of “letting go” seemed absurd in that context. But at the same time his stress and anxiety levels were sky high. He knew this wasn’t a sustainable way to live.
Yes it’s true that in meditation, we’re told to drop everything and let go. But that doesn’t mean becoming passive and ineffectual. There’s more to this instruction than meets the eye.
There’s an image that comes to mind for me to …
Jun 05, 2011
When we think of changing our lives for the better, we may think of a new job, a new home, a new relationship, or material wealth – more “things” that we think will improve our lives.
Recently I saw a bumper sticker that read “the best things in life are not things” – it made me smile and I started thinking about ways to live a better life without looking for or wanting more stuff.
Here is my list:
1. Simplify – rather than desiring more, find ways to live with less. Bring clothing to Good Will or a charity. Clear away clutter from countertops and tables. If you have not used something or worn …
Feb 05, 2011
Research suggests that people who feel gratitude benefit in the following ways:
2. less depressed
3. less stressed
4. more satisfied with their lives and social relationships
5. aware of their purpose in life
6. self confident
8. able to cope with the difficulties in positive ways
9. more likely to seek support from other people, and
10. able to learn and grow from their experiences.
It has been said that gratitude is strongly linked with mental health. Several times in my life I have kept a gratitude journal, in which I have …
Nov 11, 2010
Paul Klee, the famous Swiss/German expressionist painter, may seem to be making an almost mystical claim here — that creativity comes from beyond the conscious mind. I think you’d be right in assuming that creative impulses come from unconscious parts of the mind, but not that this is an exclusively mystical state. In fact, all action ultimately has this quality of coming from “beyond,” but we simply fail to notice this most of the time, because we’re in the grip of the illusion that the conscious mind is “us,” that it owns our actions, and that it’s in control.
When I speak, I’m often aware that my words come …
Mar 31, 2010
The more aware we become of ourselves, the more we notice that our minds resort to pre-programmed “scripts” — habitual ways of reacting to the world. Srimati discusses how awareness creates the freedom to choose our responses and free ourselves from our conditioning.
Srimati is a freelance spiritual teacher, writer and co-founder of Thrivecraft Coaching, and a former member of the Western Buddhist Order.
She is currently engaged in publishing her whole body of work via books, articles, CDs, films, and the internet. Her aim is to contribute accessible and relevant spiritual intelligence to mainstream modern life and business. Srimati’s CD, Answers: Finding …
Jun 30, 2009
Every time Sunada watches Bobby McFerrin or Yo-Yo Ma perform, she’s left in awe. It’s not just their amazing musicianship, she says. What uniquely comes through in their music is their generosity of spirit and totally engaging way of expressing their individuality. As a musician herself, she muses on what it takes to cultivate that kind of open-hearted spontaneity and creativity.
I recently read an interesting discussion that’s given shape to my thinking on this subject. It was about the difference between spontaneity and impulsivity. While the two terms are often used interchangeably, there are some subtle but important differences.
Mar 20, 2008
Vajradaka looks back on a meeting in a smoky Jazz club and explores the mystery of empathetic communication between artist and audience.
I once had a chance encounter with a jazz musician that had a big effect on me and characterized some of the important qualities of living a creative life. At the time I was living up in the hills of Wales and coming down to London periodically. During one such visit I went to a jazz gig at the old Vortex in Stoke Newington, as part of the London Jazz Festival. It was smoky and dark with only a dozen people in the audience. We did not need much empathy to …

domain: psychology


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Nevertheless, the Brazilians will have to concede that the Peruvian region of Amazon is the best place to spot world’s most exotic bird species. I read that there are nearly 2000 bird species and each one may have several sub-species. Oh man, what an experience it would be to watch those beautiful birds in their own habitat!
Amazon Jungle Tour
Even in Peru, the jungles of Andes open in two or three regions. Whatever may be your entry point, Peru is the country to land as it leads to that part of Amazon Rainforest that boasts of the highest levels of biodiversity in the world. It comprises most of the world’s most recognized bird-watching observation points. If you buy an Amazon Jungle tour mainly to watch the birds, buy one that originates from Peru. This region of Peruvian Amazon starts from the mighty Andes mountains and runs across Ecuador, Columbia, Brazil, and Bolivia.
Every wildlife scientist and professional wildlife videographers would emphatically say that the Peruvian Amazon is the most fascinatingly beautiful location on the Earth.
In Peru, following are the three main entry points into the imposing Amazon Rainforest:
- Iquitos Region
Do you know that the number of avian species in Amazon forest is more than the combined area of Europe and North America?
Once you have returned from your bird safari in Peru, you would have captured a rainbow of birds in your camera. Some of the birds that are found in the Peruvian Amazon migrate from the Andes mountain range, the Sacred Valley, and Machu Picchu, Lima, and Cusco.
Birds of Andes and Amazon of Peru
Now, let us see the range of bird species that you can spot in the Andes and Amazon of Peru
- Giant Macaw
- Andean Cock-of-the-rock
- Black Inca hummingbirds
This is the Andean Cock-of-the-rock. What a lovely looking bird! Looks like a true native of the Rainforest.
Why is the Rainforest is home to such a diverse wildlife species?
Animals and birds cannot survive without water bodies for drinking and for prey. Rainforests are usually blessed with perennial rivers. These are such rivers that flow inside the Rainforest.
- Madre de Dios
The Inkaterra Field Station is a wonderful place for bird lovers to discover and know much about the local endemic birds.
Bird safari includes a stop at Cachuela clay lick where hundreds of parakeets and parrots gather to feed on the clay that is said to be mineral rich too. It’s a must-see place to watch the hungry birds feed on insects and fruit trees.

domain: geography


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Here, he's John Matthews, a successful businessman with a trophy wife (Nadine Velazquez, Flight) and an adorable little daughter. He doesn't live with his other child from his starter marriage, Jason (Rafi Gavron, Celeste & Jesse Forever), now a high school senior.
He's a good kid. He just has bad taste in friends, one of whom gets Jason to accept a shipment of Ecstasy pills on his behalf. It arrives on Jason's doorstep mere moments before DEA agents do, and the kid is charged with distribution of narcotics and faces a minimum of 10 years in federal prison.
As if to pay his son back for not being there when he needed him most, John makes a deal with the U.S. attorney on the case (Susan Sarandon, Arbitrage): He'll bring her a real, big-time drug dealer, dangling his construction biz and its border-crossing semis as a lure all this to deliver an airtight arrest so Jason's sentence will be reduced to a year, tops. She agrees, so enlists the help of an ex-con employee (Jon Bernthal, TV's The Walking Dead) to become a narc a Snitch, if you will.
Stuntman-turned-writer/director Ric Roman Waugh shrewdly plays against the expectations of his target audience in casting Johnson. As I'm sure the film's few viewers did, those watching at home will wonder, "Hey, so when's The Rock going to deliver beatdown after beatdown?" The answer they don't want to hear: He's not.
Instead, he acts, for once not relying on his imposing figure to carry all the weight. We know Johnson can score with comedy, but he's an unknown quantity with drama. That changes with Snitch: While he remains in no danger of year-end awards buzz, he hardly embarrasses himself. It's a valiant, admirable try.
The movie is not quite up to his level. For being based on a true story, the premise isn't sold credibly enough by Waugh, and the script sits at a made-for-TV level. A couple of action sequences and only a couple, as this is not an action movie ups the ante, as does Johnsons all-in doggedness, to merit recommending. As has been apparent since 2002s The Scorpion King, the man is a bona fide movie star. Why has it taken so long for America to catch up?Rod Lott